Minority carrier lifetime properties of reactive ion etched p-type float zone Si

Prakash N.K. Deenapanray; M. Hörteis; Daniel Macdonald; K. J. Weber

doi:10.1149/1.1854116

Minority carrier lifetime properties of reactive ion etched p-type float zone Si

Prakash N.K. Deenapanray^*, M. Hörteis, Daniel Macdonald, K. J. Weber

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ± 0.02) eV, that could be either B- or H-related, was detected by DLTS in the etched samples. Furthermore, this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model. Our results show that DLTS and QSSPC is a powerful combination to characterize the electrical properties of defects that are relevant to the performance of solar cells.

Original language	English
Pages (from-to)	G78-G81
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1149/1.1854116
Publication status	Published - 2005

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title = "Minority carrier lifetime properties of reactive ion etched p-type float zone Si",

abstract = "Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ± 0.02) eV, that could be either B- or H-related, was detected by DLTS in the etched samples. Furthermore, this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model. Our results show that DLTS and QSSPC is a powerful combination to characterize the electrical properties of defects that are relevant to the performance of solar cells.",

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T1 - Minority carrier lifetime properties of reactive ion etched p-type float zone Si

AU - Deenapanray, Prakash N.K.

AU - Hörteis, M.

AU - Macdonald, Daniel

AU - Weber, K. J.

PY - 2005

Y1 - 2005

N2 - Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ± 0.02) eV, that could be either B- or H-related, was detected by DLTS in the etched samples. Furthermore, this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model. Our results show that DLTS and QSSPC is a powerful combination to characterize the electrical properties of defects that are relevant to the performance of solar cells.

AB - Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the minority carrier lifetime properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time. Evidence is provided for the long-range (> 2 μm) migration of defects in the plasma-etched samples. A discrete defect with energy position at (0.32 ± 0.02) eV, that could be either B- or H-related, was detected by DLTS in the etched samples. Furthermore, this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model. Our results show that DLTS and QSSPC is a powerful combination to characterize the electrical properties of defects that are relevant to the performance of solar cells.

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Minority carrier lifetime properties of reactive ion etched p-type float zone Si

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