@inproceedings{593a19dc39f048aa859bc854c40495b7,
title = "Mn implantation for new applications of 4H-SiC",
abstract = "Structural disorder and lattice recovery of high dose, manganese implanted, semiinsulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [1123] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.",
keywords = "4H-SiC, Ion implantation, Manganese, RBS, SIMS, TEM",
author = "Linnarsson, {M. K.} and J. Wong-Leung and A. Hall{\'e}n and Khartsev, {S. I.} and Grishin, {A. M.}",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.221",
language = "English",
isbn = "9783037854198",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "221--224",
editor = "Devaty, {Robert P.} and Michael Dudley and Chow, {T. Paul} and Neudeck, {Philip G.}",
booktitle = "Silicon Carbide and Related Materials 2011, ICSCRM 2011",
address = "Switzerland",
note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 ; Conference date: 11-09-2011 Through 16-09-2011",
}