MOCVD growth of GaAs nanowires using Ga droplets

S. Breuer; F. Karouta; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472349

MOCVD growth of GaAs nanowires using Ga droplets

S. Breuer^*, F. Karouta, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	39-40
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472349
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472349

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Breuer, S., Karouta, F., Tan, H. H., & Jagadish, C. (2012). MOCVD growth of GaAs nanowires using Ga droplets. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 39-40). Article 6472349 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472349

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title = "MOCVD growth of GaAs nanowires using Ga droplets",

abstract = "We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.",

author = "S. Breuer and F. Karouta and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472349",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "39--40",

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note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Breuer, S, Karouta, F, Tan, HH & Jagadish, C 2012, MOCVD growth of GaAs nanowires using Ga droplets. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472349, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 39-40, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472349

MOCVD growth of GaAs nanowires using Ga droplets. / Breuer, S.; Karouta, F.; Tan, H. H. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 39-40 6472349 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MOCVD growth of GaAs nanowires using Ga droplets

AU - Breuer, S.

AU - Karouta, F.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.

AB - We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.

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U2 - 10.1109/COMMAD.2012.6472349

DO - 10.1109/COMMAD.2012.6472349

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 39

EP - 40

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

MOCVD growth of GaAs nanowires using Ga droplets

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