TY - JOUR
T1 - Mode management in Bottom-Up, Parity-Time-Symmetric Micro-Cavity Lasers
AU - Wong, Wei Wen
AU - Zhang, Jihua
AU - Garg, Gaurang
AU - Jagadish, Chennupati
AU - Tan, Hark Hoe
PY - 2024/7/27
Y1 - 2024/7/27
N2 - The intrinsic non-Hermiticity of photonic devices with tunable optical gain and loss makes them excellent platforms to explore and implement applications based on parity-time symmetry, and a notable example is mode management in micro-cavity lasers. Thus far, parity-time-symmetric lasers are fabricated via conventional top-down etching processes, which are known to cause cavity sidewall roughness that is potentially detrimental to laser performance. Bottom-up fabrication of parity-time-symmetric lasers, however, has seen limited success due to strict requirements on the uniformity of cavity morphology. Here, parity-time-symmetric lasing is demonstrated in coupled InP micro-ring cavities grown directly by selective area epitaxy. With a facet engineering technique, ring laser cavities with a highly deterministic morphology are realized, enabling parity-time-symmetric laser designs. Furthermore, benefiting from the versatility and controllability of this bottom-up process, lasing mode selectivity can be enhanced through coupling gap tuning and cavity shape engineering, leading to single-mode lasing with a peak side mode suppression ratio exceeding 17 dB and a threefold single-mode brightness enhancement compared to a single, uncoupled laser cavity. This work unlocks a lasing mode management strategy that is previously unavailable to bottom-up laser cavities, which is a major step toward the realization of on-chip, low-loss, and single-mode micro-cavity lasers.
AB - The intrinsic non-Hermiticity of photonic devices with tunable optical gain and loss makes them excellent platforms to explore and implement applications based on parity-time symmetry, and a notable example is mode management in micro-cavity lasers. Thus far, parity-time-symmetric lasers are fabricated via conventional top-down etching processes, which are known to cause cavity sidewall roughness that is potentially detrimental to laser performance. Bottom-up fabrication of parity-time-symmetric lasers, however, has seen limited success due to strict requirements on the uniformity of cavity morphology. Here, parity-time-symmetric lasing is demonstrated in coupled InP micro-ring cavities grown directly by selective area epitaxy. With a facet engineering technique, ring laser cavities with a highly deterministic morphology are realized, enabling parity-time-symmetric laser designs. Furthermore, benefiting from the versatility and controllability of this bottom-up process, lasing mode selectivity can be enhanced through coupling gap tuning and cavity shape engineering, leading to single-mode lasing with a peak side mode suppression ratio exceeding 17 dB and a threefold single-mode brightness enhancement compared to a single, uncoupled laser cavity. This work unlocks a lasing mode management strategy that is previously unavailable to bottom-up laser cavities, which is a major step toward the realization of on-chip, low-loss, and single-mode micro-cavity lasers.
KW - III-V nanostructure shape engineering
KW - lasing mode management
KW - micro-cavity lasers
KW - non-hermitian photonics
KW - parity-time symmetry
KW - selective area epitaxy
UR - http://www.scopus.com/inward/record.url?scp=85199810862&partnerID=8YFLogxK
U2 - 10.1002/lpor.202400222
DO - 10.1002/lpor.202400222
M3 - Article
AN - SCOPUS:85199810862
SN - 1863-8880
JO - Laser and Photonics Reviews
JF - Laser and Photonics Reviews
M1 - 2400222
ER -