@inproceedings{1decda5d2dd345a5b586474a3251f238,
title = "Modeling Photoluminescence Spectra in Heavily Boron Doped Silicon",
abstract = "This work aims to establish an empirical model to describe the relationship between boron doping concentrations in uniformly doped crystalline silicon wafers and their photoluminescence spectra measured at liquid nitrogen temperatures. The range of doping concentrations measured is between 1 × 10{{17}}~{{mathrm {cm}}} {{-3}} and 1.1 × 10{{20}}~{{mathrm {cm}}} {{-3}}. Combinations of Gaussian curves are used to construct the photoluminescence spectra with satisfactory accuracy, and the fitting parameters are expressed as empirical functions of the doping concentrations. This work will lay the foundation for future efforts to probe the dopant concentration and depth profile of thermally boron diffused silicon samples using photoluminescence spectra.",
keywords = "crystalline silicon, doping concentration, photovoltaic cells, silicon",
author = "Huiting Wu and Rabin Basnet and Nguyen, {Hieu T.} and Daniel Macdonald",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = nov,
day = "26",
doi = "10.1109/PVSC.2018.8548254",
language = "English",
series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2256--2260",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
address = "United States",
}