Modeling recombination at the Si-Al2O3 interface

Lachlan E. Black; Keith R. McIntosh

doi:10.1109/PVSC.2012.6317600

Modeling recombination at the Si-Al₂O₃ interface

Lachlan E. Black^*, Keith R. McIntosh

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We present a complete set of data on the surface passivation parameters of APCVD Al₂O₃ deposited with TEDA-TSB and H₂O precursors at temperatures between 325 and 520°C. Using measured values of the fixed charge Q_f, and of the interface defect density D _it(E), electron capture cross-section σ_n(E) and hole capture cross-section σ_p(E) as a function of the energy within the bandgap E, we calculate surface recombination velocities using the SRH model and compare these to measured values, finding excellent agreement when Q_f is large, and reasonable agreement otherwise. It is shown that for typical values of Q_f, recombination is dominated by a single defect species located just below midgap. These results confirm the direct correspondence between Q_f, D_it(E), σ_n(E) and σ_p(E) determined by capacitance and conductance measurements of MIS structures and the carrier lifetimes measured by photoconductance.

Original language	English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	199-203
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2012.6317600
Publication status	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

Access to Document

10.1109/PVSC.2012.6317600

Cite this

@inproceedings{8a21b29d514d4652922ed24b3efb6279,

title = "Modeling recombination at the Si-Al2O3 interface",

abstract = "We present a complete set of data on the surface passivation parameters of APCVD Al2O3 deposited with TEDA-TSB and H2O precursors at temperatures between 325 and 520°C. Using measured values of the fixed charge Qf, and of the interface defect density D it(E), electron capture cross-section σn(E) and hole capture cross-section σp(E) as a function of the energy within the bandgap E, we calculate surface recombination velocities using the SRH model and compare these to measured values, finding excellent agreement when Qf is large, and reasonable agreement otherwise. It is shown that for typical values of Qf, recombination is dominated by a single defect species located just below midgap. These results confirm the direct correspondence between Qf, Dit(E), σn(E) and σp(E) determined by capacitance and conductance measurements of MIS structures and the carrier lifetimes measured by photoconductance.",

keywords = "Semiconductor-insulator interfaces, charge carrier lifetime, interface states, photovoltaic cells, silicon",

author = "Black, {Lachlan E.} and McIntosh, {Keith R.}",

year = "2012",

doi = "10.1109/PVSC.2012.6317600",

language = "English",

isbn = "9781467300643",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "199--203",

booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",

note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",

}

Black, LE & McIntosh, KR 2012, Modeling recombination at the Si-Al₂O₃ interface. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317600, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 199-203, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317600

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T1 - Modeling recombination at the Si-Al2O3 interface

AU - Black, Lachlan E.

AU - McIntosh, Keith R.

PY - 2012

Y1 - 2012

N2 - We present a complete set of data on the surface passivation parameters of APCVD Al2O3 deposited with TEDA-TSB and H2O precursors at temperatures between 325 and 520°C. Using measured values of the fixed charge Qf, and of the interface defect density D it(E), electron capture cross-section σn(E) and hole capture cross-section σp(E) as a function of the energy within the bandgap E, we calculate surface recombination velocities using the SRH model and compare these to measured values, finding excellent agreement when Qf is large, and reasonable agreement otherwise. It is shown that for typical values of Qf, recombination is dominated by a single defect species located just below midgap. These results confirm the direct correspondence between Qf, Dit(E), σn(E) and σp(E) determined by capacitance and conductance measurements of MIS structures and the carrier lifetimes measured by photoconductance.

AB - We present a complete set of data on the surface passivation parameters of APCVD Al2O3 deposited with TEDA-TSB and H2O precursors at temperatures between 325 and 520°C. Using measured values of the fixed charge Qf, and of the interface defect density D it(E), electron capture cross-section σn(E) and hole capture cross-section σp(E) as a function of the energy within the bandgap E, we calculate surface recombination velocities using the SRH model and compare these to measured values, finding excellent agreement when Qf is large, and reasonable agreement otherwise. It is shown that for typical values of Qf, recombination is dominated by a single defect species located just below midgap. These results confirm the direct correspondence between Qf, Dit(E), σn(E) and σp(E) determined by capacitance and conductance measurements of MIS structures and the carrier lifetimes measured by photoconductance.

KW - Semiconductor-insulator interfaces

KW - charge carrier lifetime

KW - interface states

KW - photovoltaic cells

KW - silicon

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DO - 10.1109/PVSC.2012.6317600

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