Abstract
Radio frequency (rf) plasma sources used in the processing of thin films can be divided into three distinct categories: capacitive (E), inductive (H), and wave (W) -sustained (e.g., helicon) discharges. As the excitation power or voltage is increased, transitions from capacitive to inductive to helicon discharges are often observed, in some cases exhibiting hysteresis. A model is developed to determine these transitions based on the electron energy balance in the discharge and the coupling between capacitive, inductive, and helicon electron energy deposition.
Original language | English |
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Pages | Pr7-145-Pr7-164 |
Number of pages | 19 |
DOIs | |
Publication status | Published - 1998 |
Event | 3rd International Workshop Microwave Discharges: Fundamentals and Applications - Abbaye Royale de Fontevraud, Fontevraud - l'Abbaye, France Duration: 20 Apr 1997 → 25 Apr 1997 |
Conference
Conference | 3rd International Workshop Microwave Discharges: Fundamentals and Applications |
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Country/Territory | France |
City | Fontevraud - l'Abbaye |
Period | 20/04/97 → 25/04/97 |