Modeling the transitions from capacitive to inductive to wave-sustained rf discharges

M. A. Lieberman; R. W. Boswell

doi:10.1051/jp4:1998712

Modeling the transitions from capacitive to inductive to wave-sustained rf discharges

M. A. Lieberman^*, R. W. Boswell

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

34 Citations (Scopus)

Abstract

Radio frequency (rf) plasma sources used in the processing of thin films can be divided into three distinct categories: capacitive (E), inductive (H), and wave (W) -sustained (e.g., helicon) discharges. As the excitation power or voltage is increased, transitions from capacitive to inductive to helicon discharges are often observed, in some cases exhibiting hysteresis. A model is developed to determine these transitions based on the electron energy balance in the discharge and the coupling between capacitive, inductive, and helicon electron energy deposition.

Original language	English
Pages	Pr7-145-Pr7-164
Number of pages	19
DOIs	https://doi.org/10.1051/jp4:1998712
Publication status	Published - 1998
Event	3rd International Workshop Microwave Discharges: Fundamentals and Applications - Abbaye Royale de Fontevraud, Fontevraud - l'Abbaye, France Duration: 20 Apr 1997 → 25 Apr 1997

Conference

Conference	3rd International Workshop Microwave Discharges: Fundamentals and Applications
Country/Territory	France
City	Fontevraud - l'Abbaye
Period	20/04/97 → 25/04/97

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title = "Modeling the transitions from capacitive to inductive to wave-sustained rf discharges",

abstract = "Radio frequency (rf) plasma sources used in the processing of thin films can be divided into three distinct categories: capacitive (E), inductive (H), and wave (W) -sustained (e.g., helicon) discharges. As the excitation power or voltage is increased, transitions from capacitive to inductive to helicon discharges are often observed, in some cases exhibiting hysteresis. A model is developed to determine these transitions based on the electron energy balance in the discharge and the coupling between capacitive, inductive, and helicon electron energy deposition.",

author = "Lieberman, \{M. A.\} and Boswell, \{R. W.\}",

year = "1998",

doi = "10.1051/jp4:1998712",

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note = "3rd International Workshop Microwave Discharges: Fundamentals and Applications ; Conference date: 20-04-1997 Through 25-04-1997",

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AU - Lieberman, M. A.

AU - Boswell, R. W.

PY - 1998

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N2 - Radio frequency (rf) plasma sources used in the processing of thin films can be divided into three distinct categories: capacitive (E), inductive (H), and wave (W) -sustained (e.g., helicon) discharges. As the excitation power or voltage is increased, transitions from capacitive to inductive to helicon discharges are often observed, in some cases exhibiting hysteresis. A model is developed to determine these transitions based on the electron energy balance in the discharge and the coupling between capacitive, inductive, and helicon electron energy deposition.

AB - Radio frequency (rf) plasma sources used in the processing of thin films can be divided into three distinct categories: capacitive (E), inductive (H), and wave (W) -sustained (e.g., helicon) discharges. As the excitation power or voltage is increased, transitions from capacitive to inductive to helicon discharges are often observed, in some cases exhibiting hysteresis. A model is developed to determine these transitions based on the electron energy balance in the discharge and the coupling between capacitive, inductive, and helicon electron energy deposition.

UR - https://www.scopus.com/pages/publications/0010643157

U2 - 10.1051/jp4:1998712

DO - 10.1051/jp4:1998712

M3 - Paper

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T2 - 3rd International Workshop Microwave Discharges: Fundamentals and Applications

Y2 - 20 April 1997 through 25 April 1997

ER -

Modeling the transitions from capacitive to inductive to wave-sustained rf discharges

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