Modelling silicon characterisation

Andres Cuevas

doi:10.1016/j.egypro.2011.06.108

Modelling silicon characterisation

Andres Cuevas^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

A versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform indepth post-measurement analysis and diagnosis of silicon materials.

Original language	English
Pages (from-to)	94-99
Number of pages	6
Journal	Energy Procedia
Volume	8
DOIs	https://doi.org/10.1016/j.egypro.2011.06.108
Publication status	Published - 2011

Access to Document

10.1016/j.egypro.2011.06.108

Cite this

@article{bec1843d28444543892e2706427d8bac,

title = "Modelling silicon characterisation",

abstract = "A versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform indepth post-measurement analysis and diagnosis of silicon materials.",

keywords = "Characterisation, Modelling",

author = "Andres Cuevas",

year = "2011",

doi = "10.1016/j.egypro.2011.06.108",

language = "English",

volume = "8",

pages = "94--99",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Modelling silicon characterisation

AU - Cuevas, Andres

PY - 2011

Y1 - 2011

N2 - A versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform indepth post-measurement analysis and diagnosis of silicon materials.

AB - A versatile computer model is presented for the simulation of several characterization techniques commonly used to determine the electronic properties of silicon wafers and solar cells. Several different sets of empirical data for carrier mobility and carrier recombination in crystalline silicon can be optionally selected to investigate their impact on device performance. The model is applicable to arbitrary carrier injection conditions and compensated doping. It is an advanced tool that permits to predict the outcome of characterization experiments, design new ones, or to perform indepth post-measurement analysis and diagnosis of silicon materials.

KW - Characterisation

KW - Modelling

UR - http://www.scopus.com/inward/record.url?scp=80052098144&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2011.06.108

DO - 10.1016/j.egypro.2011.06.108

M3 - Article

SN - 1876-6102

VL - 8

SP - 94

EP - 99

JO - Energy Procedia

JF - Energy Procedia

ER -

Modelling silicon characterisation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this