Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells

Binesh Puthen Veettil; Robert Patterson; Dirk Koenig; Gavin Conibeer; Martin Green

doi:10.4229/25thEUPVSEC2010-1DV.3.64

Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells

Binesh Puthen Veettil, Robert Patterson, Dirk Koenig, Gavin Conibeer, Martin Green

Research output: Contribution to conference › Paper › peer-review

Abstract

We present a fast three dimensional model for quantitatively analyzing the effects of modulation doping in quantum dot (QD) structures. We developed a Schrödinger-Poisson self-consistent solver using modified Full Multi Grid (FMG) methods to achieve this. We used this model for quantitatively analyzing the effects of doping in QD structures, in terms of the confinement energy. We investigated the electron-electron repulsion potential inside quantum dots and the effect of the electric field created by donor atoms in proximity of spherical QDs. We have found that these effects are prominent in structures with SiO2 dielectric than those with Si3N4 dielectric.

Original language	English
Pages	697-699
Number of pages	3
DOIs	https://doi.org/10.4229/25thEUPVSEC2010-1DV.3.64
Publication status	Published - 10 Sept 2010
Externally published	Yes
Event	25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010 - Valencia, Spain Duration: 6 Sept 2010 → 10 Sept 2010

Conference

Conference	25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010
Abbreviated title	25th EU PVSEC/WCPEC-5
Country/Territory	Spain
City	Valencia
Period	6/09/10 → 10/09/10

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Veettil, B. P., Patterson, R., Koenig, D., Conibeer, G., & Green, M. (2010). Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells. 697-699. Paper presented at 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010 , Valencia, Spain. https://doi.org/10.4229/25thEUPVSEC2010-1DV.3.64

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title = "Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells",

abstract = "We present a fast three dimensional model for quantitatively analyzing the effects of modulation doping in quantum dot (QD) structures. We developed a Schr{\"o}dinger-Poisson self-consistent solver using modified Full Multi Grid (FMG) methods to achieve this. We used this model for quantitatively analyzing the effects of doping in QD structures, in terms of the confinement energy. We investigated the electron-electron repulsion potential inside quantum dots and the effect of the electric field created by donor atoms in proximity of spherical QDs. We have found that these effects are prominent in structures with SiO2 dielectric than those with Si3N4 dielectric.",

author = "Veettil, {Binesh Puthen} and Robert Patterson and Dirk Koenig and Gavin Conibeer and Martin Green",

year = "2010",

month = sep,

day = "10",

doi = "10.4229/25thEUPVSEC2010-1DV.3.64",

language = "English",

pages = "697--699",

note = "25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010 , 25th EU PVSEC/WCPEC-5 ; Conference date: 06-09-2010 Through 10-09-2010",

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Veettil, BP, Patterson, R, Koenig, D, Conibeer, G & Green, M 2010, 'Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells', Paper presented at 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010 , Valencia, Spain, 6/09/10 - 10/09/10 pp. 697-699. https://doi.org/10.4229/25thEUPVSEC2010-1DV.3.64

Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells. / Veettil, Binesh Puthen; Patterson, Robert; Koenig, Dirk et al.
2010. 697-699 Paper presented at 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010 , Valencia, Spain.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells

AU - Veettil, Binesh Puthen

AU - Patterson, Robert

AU - Koenig, Dirk

AU - Conibeer, Gavin

AU - Green, Martin

PY - 2010/9/10

Y1 - 2010/9/10

N2 - We present a fast three dimensional model for quantitatively analyzing the effects of modulation doping in quantum dot (QD) structures. We developed a Schrödinger-Poisson self-consistent solver using modified Full Multi Grid (FMG) methods to achieve this. We used this model for quantitatively analyzing the effects of doping in QD structures, in terms of the confinement energy. We investigated the electron-electron repulsion potential inside quantum dots and the effect of the electric field created by donor atoms in proximity of spherical QDs. We have found that these effects are prominent in structures with SiO2 dielectric than those with Si3N4 dielectric.

AB - We present a fast three dimensional model for quantitatively analyzing the effects of modulation doping in quantum dot (QD) structures. We developed a Schrödinger-Poisson self-consistent solver using modified Full Multi Grid (FMG) methods to achieve this. We used this model for quantitatively analyzing the effects of doping in QD structures, in terms of the confinement energy. We investigated the electron-electron repulsion potential inside quantum dots and the effect of the electric field created by donor atoms in proximity of spherical QDs. We have found that these effects are prominent in structures with SiO2 dielectric than those with Si3N4 dielectric.

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DO - 10.4229/25thEUPVSEC2010-1DV.3.64

M3 - Paper

SP - 697

EP - 699

T2 - 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 2010

Y2 - 6 September 2010 through 10 September 2010

ER -

Modelling the Effects of Doping in Quantum Dot Structures for Tandem Cells

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Conference

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