Modulated interlayer charge transfer dynamics in a monolayer TMD/metal junction

Linglong Zhang; Han Yan; Xueqian Sun; Miheng Dong; Tanju Yildirim; Bowen Wang; Bo Wen; Guru Prakash Neupane; Ankur Sharma; Yi Zhu; Jian Zhang; Kun Liang; Boqing Liu; Hieu T. Nguyen; Daniel Macdonald; Yuerui Lu

doi:10.1039/c8nr08728h

Modulated interlayer charge transfer dynamics in a monolayer TMD/metal junction

Linglong Zhang^*, Han Yan, Xueqian Sun, Miheng Dong, Tanju Yildirim, Bowen Wang, Bo Wen, Guru Prakash Neupane, Ankur Sharma, Yi Zhu, Jian Zhang, Kun Liang, Boqing Liu, Hieu T. Nguyen, Daniel Macdonald, Yuerui Lu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

The performance of optoelectronic devices based on monolayer transition-metal dichalcogenide (mTMD) semiconductors is significantly affected by the contact at the mTMD-metal interface, which is dependent on interlayer interactions and coupling. Here, we report a systematic optical method to investigate the interlayer charge transfer and coupling in a mTMD-metal heterojunction. Giant photoluminescence (PL) quenching was observed in a monolayer MoS ₂ /Pd (1L MoS ₂ /Pd) junction which is mainly due to the efficient interlayer charge transfer between Pd and MoS ₂ . 1L MoS ₂ /Pd also exhibits an increase in the PL quenching factor (η) as the temperature decreases, due to a reduction of the interlayer spacing. Annealing experiments were also performed which supported interlayer charge transfer as the main mechanism for the increase of η. Moreover, a monolayer MoS ₂ /Au (1L MoS ₂ /Au) junction was fabricated for engineering the interlayer charge transfer. Interestingly, a narrowing effect of the full width at half maximum (FWHM) was encountered as the junctions changed from 1L MoS ₂ /SiO ₂ → 1L MoS ₂ /Au → 1L MoS ₂ /Pd, possibly originating from a change of the doping level induced weakening of exciton-carrier scattering. Our results deepen the understanding of metal-semiconductor junctions for further exploring fundamental phenomena and enabling high-performance devices using mTMD-metal junctions.

Original language	English
Pages (from-to)	418-425
Number of pages	8
Journal	Nanoscale
Volume	11
Issue number	2
DOIs	https://doi.org/10.1039/c8nr08728h
Publication status	Published - 14 Jan 2019

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title = "Modulated interlayer charge transfer dynamics in a monolayer TMD/metal junction",

abstract = " The performance of optoelectronic devices based on monolayer transition-metal dichalcogenide (mTMD) semiconductors is significantly affected by the contact at the mTMD-metal interface, which is dependent on interlayer interactions and coupling. Here, we report a systematic optical method to investigate the interlayer charge transfer and coupling in a mTMD-metal heterojunction. Giant photoluminescence (PL) quenching was observed in a monolayer MoS 2 /Pd (1L MoS 2 /Pd) junction which is mainly due to the efficient interlayer charge transfer between Pd and MoS 2 . 1L MoS 2 /Pd also exhibits an increase in the PL quenching factor (η) as the temperature decreases, due to a reduction of the interlayer spacing. Annealing experiments were also performed which supported interlayer charge transfer as the main mechanism for the increase of η. Moreover, a monolayer MoS 2 /Au (1L MoS 2 /Au) junction was fabricated for engineering the interlayer charge transfer. Interestingly, a narrowing effect of the full width at half maximum (FWHM) was encountered as the junctions changed from 1L MoS 2 /SiO 2 → 1L MoS 2 /Au → 1L MoS 2 /Pd, possibly originating from a change of the doping level induced weakening of exciton-carrier scattering. Our results deepen the understanding of metal-semiconductor junctions for further exploring fundamental phenomena and enabling high-performance devices using mTMD-metal junctions.",

author = "Linglong Zhang and Han Yan and Xueqian Sun and Miheng Dong and Tanju Yildirim and Bowen Wang and Bo Wen and Neupane, {Guru Prakash} and Ankur Sharma and Yi Zhu and Jian Zhang and Kun Liang and Boqing Liu and Nguyen, {Hieu T.} and Daniel Macdonald and Yuerui Lu",

note = "Publisher Copyright: {\textcopyright} 2019 The Royal Society of Chemistry.",

year = "2019",

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doi = "10.1039/c8nr08728h",

language = "English",

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T1 - Modulated interlayer charge transfer dynamics in a monolayer TMD/metal junction

AU - Zhang, Linglong

AU - Yan, Han

AU - Sun, Xueqian

AU - Dong, Miheng

AU - Yildirim, Tanju

AU - Wang, Bowen

AU - Wen, Bo

AU - Neupane, Guru Prakash

AU - Sharma, Ankur

AU - Zhu, Yi

AU - Zhang, Jian

AU - Liang, Kun

AU - Liu, Boqing

AU - Nguyen, Hieu T.

AU - Macdonald, Daniel

AU - Lu, Yuerui

PY - 2019/1/14

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N2 - The performance of optoelectronic devices based on monolayer transition-metal dichalcogenide (mTMD) semiconductors is significantly affected by the contact at the mTMD-metal interface, which is dependent on interlayer interactions and coupling. Here, we report a systematic optical method to investigate the interlayer charge transfer and coupling in a mTMD-metal heterojunction. Giant photoluminescence (PL) quenching was observed in a monolayer MoS 2 /Pd (1L MoS 2 /Pd) junction which is mainly due to the efficient interlayer charge transfer between Pd and MoS 2 . 1L MoS 2 /Pd also exhibits an increase in the PL quenching factor (η) as the temperature decreases, due to a reduction of the interlayer spacing. Annealing experiments were also performed which supported interlayer charge transfer as the main mechanism for the increase of η. Moreover, a monolayer MoS 2 /Au (1L MoS 2 /Au) junction was fabricated for engineering the interlayer charge transfer. Interestingly, a narrowing effect of the full width at half maximum (FWHM) was encountered as the junctions changed from 1L MoS 2 /SiO 2 → 1L MoS 2 /Au → 1L MoS 2 /Pd, possibly originating from a change of the doping level induced weakening of exciton-carrier scattering. Our results deepen the understanding of metal-semiconductor junctions for further exploring fundamental phenomena and enabling high-performance devices using mTMD-metal junctions.

AB - The performance of optoelectronic devices based on monolayer transition-metal dichalcogenide (mTMD) semiconductors is significantly affected by the contact at the mTMD-metal interface, which is dependent on interlayer interactions and coupling. Here, we report a systematic optical method to investigate the interlayer charge transfer and coupling in a mTMD-metal heterojunction. Giant photoluminescence (PL) quenching was observed in a monolayer MoS 2 /Pd (1L MoS 2 /Pd) junction which is mainly due to the efficient interlayer charge transfer between Pd and MoS 2 . 1L MoS 2 /Pd also exhibits an increase in the PL quenching factor (η) as the temperature decreases, due to a reduction of the interlayer spacing. Annealing experiments were also performed which supported interlayer charge transfer as the main mechanism for the increase of η. Moreover, a monolayer MoS 2 /Au (1L MoS 2 /Au) junction was fabricated for engineering the interlayer charge transfer. Interestingly, a narrowing effect of the full width at half maximum (FWHM) was encountered as the junctions changed from 1L MoS 2 /SiO 2 → 1L MoS 2 /Au → 1L MoS 2 /Pd, possibly originating from a change of the doping level induced weakening of exciton-carrier scattering. Our results deepen the understanding of metal-semiconductor junctions for further exploring fundamental phenomena and enabling high-performance devices using mTMD-metal junctions.

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U2 - 10.1039/c8nr08728h

DO - 10.1039/c8nr08728h

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VL - 11

SP - 418

EP - 425

JO - Nanoscale

JF - Nanoscale

IS - 2

ER -

Modulated interlayer charge transfer dynamics in a monolayer TMD/metal junction

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