Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells

James Bullock*, Andres Cuevas, Thomas Allen, Corsin Battaglia

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    276 Citations (Scopus)

    Abstract

    This letter examines the application of transparent MoOx (x < 3) films deposited by thermal evaporation directly onto crystalline silicon (c-Si) to create hole-conducting contacts for silicon solar cells. The carrier-selectivity of MoOx based contacts on both n- and p-type surfaces is evaluated via simultaneous consideration of the contact recombination parameter J0c and the contact resistivity ρc. Contacts made to p-type wafers and p+ diffused regions achieve optimum ρc values of 1 and 0.2 mΩ·cm2, respectively, and both result in a J0c of ∼200 fA/cm2. These values suggest that significant gains can be made over conventional hole contacts to p-type material. Similar MoOx contacts made to n-type silicon result in higher J0c and ρc with optimum values of ∼300 fA/cm2 and 30 mΩ·cm2 but still offer significant advantages over conventional approaches in terms of contact passivation, optical properties, and device fabrication.

    Original languageEnglish
    Article number232109
    JournalApplied Physics Letters
    Volume105
    Issue number23
    DOIs
    Publication statusPublished - 8 Dec 2014

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