Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

P. Sajewicz; L. Fu; H. H. Tan; K. Vora; C. Jagadish

doi:10.1109/COMMAD.2012.6472398

Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

P. Sajewicz^*
, L. Fu
, H. H. Tan
, K. Vora
, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

In this work, we report the use of dielectric capping layer of TiO ₂ to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	137-138
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472398
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472398

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Sajewicz, P., Fu, L., Tan, H. H., Vora, K., & Jagadish, C. (2012). Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 137-138). Article 6472398 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472398

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title = "Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing",

abstract = "In this work, we report the use of dielectric capping layer of TiO 2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.",

author = "P. Sajewicz and L. Fu and Tan, \{H. H.\} and K. Vora and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472398",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "137--138",

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note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Sajewicz, P, Fu, L , Tan, HH, Vora, K & Jagadish, C 2012, Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472398, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 137-138, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472398

Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing. / Sajewicz, P.; Fu, L.; Tan, H. H. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 137-138 6472398 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

AU - Sajewicz, P.

AU - Fu, L.

AU - Tan, H. H.

AU - Vora, K.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - In this work, we report the use of dielectric capping layer of TiO 2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.

AB - In this work, we report the use of dielectric capping layer of TiO 2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ∼ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.

UR - https://www.scopus.com/pages/publications/84875614884

U2 - 10.1109/COMMAD.2012.6472398

DO - 10.1109/COMMAD.2012.6472398

M3 - Conference Paper

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 137

EP - 138

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Sajewicz P, Fu L , Tan HH, Vora K, Jagadish C. Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 137-138. 6472398. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472398

Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing

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