Morphology and composition controlled GaxIn1-xSb nanowires: Understanding ternary antimonide growth

Sepideh Gorji Ghalamestani*, Martin Ek, Masoomeh Ghasemi, Philippe Caroff, Jonas Johansson, Kimberly A. Dick

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)

    Abstract

    Antimonide-based nanowires represent an important new class of material with great promise for both fundamental physics studies and various device applications. We report a comprehensive study on understanding the growth behaviour of GaxIn1-xSb nanowires on GaAs substrates using Au nanoparticles. First, the effect of growth parameters on the morphology and composition of GaxIn1-xSb nanowires is extensively studied over the entire compositional range (from 3 to ∼100% of In). Second, the obtained compositional results are explained by a kinetic model, suggesting an Arrhenius-type behavior for the trimethylindium (TMIn) precursor. Third, the particle composition is fully investigated and the implications for growth are discussed with reference to our calculated Au-Ga-In phase diagram. Fourth, a mechanism is presented to explain the temperature-dependent morphology and radial growth of the GaxIn1-xSb nanowires. Finally, we demonstrate homogeneous compositions in both axial and radial directions and the nanowires remain entirely twin-free zinc blende. The understanding gained from this study together with the potential to precisely tailor the band gap, wavelength and carrier mobilities allows fabrication of various Ga xIn1-xSb-based nanowire devices.

    Original languageEnglish
    Pages (from-to)1086-1092
    Number of pages7
    JournalNanoscale
    Volume6
    Issue number2
    DOIs
    Publication statusPublished - 21 Jan 2014

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