@inproceedings{ff51e9b02fdf4f6f9bdd69f3fed56ad9,
title = "Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes",
abstract = "Morphology and crystal-quality of InAs/In0.53Ga 0.47As/InP quantum dots (QDs) grown by metal-organic vapor phase epitaxy (MOVPE) in N2 ambient using different growth modes have been studied. It is found that the morphology and crystal-quality of InAs QDs are dependant on the growth modes. After optimizing the dots' growth modes, dots' size dispersion and crystal-quality are both improved greatly, resulting in the enhancement factor of ∼ 2.9 in the photoluminescence (PL) peak-intensity from single QD. When the dots are buried, the dot size decrease compared with the free-standing dots due to the soon capping layer deposition during dots' being buried. The thermal activation energy measured is comparable to the valence-band offset in the QD system calculated by 8 kp theory model. This indicates the PL quenching induced by the interface defects is suppressed due to the defect density lowering in the QDs grown by such optimized growth mode.",
keywords = "Crystal quality, Growth modes, Morphology, MOVPE, Quantum dots",
author = "Zongyou Yin and Xiaohong Tang and Jixuan Zhang and Sentosa Deny and Jinghua Teng and Anyan Du and Chin, \{Mee Koy\}",
year = "2008",
doi = "10.4028/www.scientific.net/AMR.31.17",
language = "English",
isbn = "0878494715",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "17--19",
booktitle = "Semiconductor Photonics",
address = "Germany",
note = "International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference date: 01-07-2007 Through 06-07-2007",
}