MOVPE growth of InAs quantum dots for mid-IR applications

Xiao Hong Tang; Zong You Yin; An Yan Du; Jing Hua Zhao; S. Deny

doi:10.1016/S1003-6326(06)60135-0

MOVPE growth of InAs quantum dots for mid-IR applications

Xiao Hong Tang^*, Zong You Yin, An Yan Du, Jing Hua Zhao, S. Deny

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

InAs quantum dots (QDs) grown on In_xGa_1-xAs/InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such In_xGa_1-xAs/InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3 × 10¹⁰ cm^-2 are grown by using S-K growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary S-K method and ALE method, respectively. Narrow photoluminescence (PL) emission spectrum of the QDs grown by using the two-step growth method is received. FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K.

Original language	English
Pages (from-to)	s25-s28
Journal	Transactions of Nonferrous Metals Society of China (English Edition)
Volume	16
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/S1003-6326(06)60135-0
Publication status	Published - Jun 2006
Externally published	Yes

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title = "MOVPE growth of InAs quantum dots for mid-IR applications",

abstract = "InAs quantum dots (QDs) grown on InxGa1-xAs/InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such InxGa1-xAs/InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3 × 1010 cm-2 are grown by using S-K growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary S-K method and ALE method, respectively. Narrow photoluminescence (PL) emission spectrum of the QDs grown by using the two-step growth method is received. FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K.",

keywords = "InAs, InGaAs/InP, MOVPE, Mid-infrared, Quantum dots",

author = "Tang, {Xiao Hong} and Yin, {Zong You} and Du, {An Yan} and Zhao, {Jing Hua} and S. Deny",

year = "2006",

month = jun,

doi = "10.1016/S1003-6326(06)60135-0",

language = "English",

volume = "16",

pages = "s25--s28",

journal = "Transactions of Nonferrous Metals Society of China (English Edition)",

issn = "1003-6326",

publisher = "Nonferrous Metals Society of China",

number = "SUPPL.",

}

TY - JOUR

T1 - MOVPE growth of InAs quantum dots for mid-IR applications

AU - Tang, Xiao Hong

AU - Yin, Zong You

AU - Du, An Yan

AU - Zhao, Jing Hua

AU - Deny, S.

PY - 2006/6

Y1 - 2006/6

N2 - InAs quantum dots (QDs) grown on InxGa1-xAs/InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such InxGa1-xAs/InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3 × 1010 cm-2 are grown by using S-K growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary S-K method and ALE method, respectively. Narrow photoluminescence (PL) emission spectrum of the QDs grown by using the two-step growth method is received. FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K.

AB - InAs quantum dots (QDs) grown on InxGa1-xAs/InP matrix by low pressure metal organic vapor phase epitaxy (LP-MOVPE) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such InxGa1-xAs/InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3 × 1010 cm-2 are grown by using S-K growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary S-K method and ALE method, respectively. Narrow photoluminescence (PL) emission spectrum of the QDs grown by using the two-step growth method is received. FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K.

KW - InAs

KW - InGaAs/InP

KW - MOVPE

KW - Mid-infrared

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=33746835349&partnerID=8YFLogxK

U2 - 10.1016/S1003-6326(06)60135-0

DO - 10.1016/S1003-6326(06)60135-0

M3 - Article

SN - 1003-6326

VL - 16

SP - s25-s28

JO - Transactions of Nonferrous Metals Society of China (English Edition)

JF - Transactions of Nonferrous Metals Society of China (English Edition)

IS - SUPPL.

ER -

MOVPE growth of InAs quantum dots for mid-IR applications

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