MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting

Jay Mathews; Tuan Tran; Yining Liu; Quentin Hudspeth; Buguo Wang; Lachlan Smillie; Renaud Bruce; Jeffrey Warrender; James Williams

doi:10.1109/PHOSST.2019.8794879

MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting

Jay Mathews^*, Tuan Tran, Yining Liu, Quentin Hudspeth, Buguo Wang, Lachlan Smillie, Renaud Bruce, Jeffrey Warrender, James Williams

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Room temperature photoluminescence (PL) was observed from GeSn layers fabricated by ion implantation of Sn into bulk Ge followed by pulsed laser melting using an Nd:YAG laser at 355 nm. PL measurements indicate regions of high-crystalline quality with Sn concentrations of up to 9%.

Original language	English
Title of host publication	IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728105970
DOIs	https://doi.org/10.1109/PHOSST.2019.8794879
Publication status	Published - Jul 2019
Event	2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019 - Fort Lauderdale, United States Duration: 8 Jul 2019 → 10 Jul 2019

Publication series

Name	IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019

Conference

Conference	2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019
Country/Territory	United States
City	Fort Lauderdale
Period	8/07/19 → 10/07/19

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Mathews, J., Tran, T., Liu, Y., Hudspeth, Q., Wang, B., Smillie, L., Bruce, R., Warrender, J., & Williams, J. (2019). MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting. In IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019 Article 8794879 (IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2019.8794879

@inproceedings{f9a06c5ffc884d58b5dd9cdecdbbd217,

title = "MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting",

abstract = "Room temperature photoluminescence (PL) was observed from GeSn layers fabricated by ion implantation of Sn into bulk Ge followed by pulsed laser melting using an Nd:YAG laser at 355 nm. PL measurements indicate regions of high-crystalline quality with Sn concentrations of up to 9%.",

keywords = "GeSn, Germanium, Silicon photonics",

author = "Jay Mathews and Tuan Tran and Yining Liu and Quentin Hudspeth and Buguo Wang and Lachlan Smillie and Renaud Bruce and Jeffrey Warrender and James Williams",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019 ; Conference date: 08-07-2019 Through 10-07-2019",

year = "2019",

month = jul,

doi = "10.1109/PHOSST.2019.8794879",

language = "English",

series = "IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019",

address = "United States",

}

Mathews, J, Tran, T, Liu, Y, Hudspeth, Q, Wang, B, Smillie, L, Bruce, R, Warrender, J & Williams, J 2019, MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting. in IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019., 8794879, IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019, Fort Lauderdale, United States, 8/07/19. https://doi.org/10.1109/PHOSST.2019.8794879

MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting. / Mathews, Jay; Tran, Tuan; Liu, Yining et al.
IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8794879 (IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting

AU - Mathews, Jay

AU - Tran, Tuan

AU - Liu, Yining

AU - Hudspeth, Quentin

AU - Wang, Buguo

AU - Smillie, Lachlan

AU - Bruce, Renaud

AU - Warrender, Jeffrey

AU - Williams, James

PY - 2019/7

Y1 - 2019/7

N2 - Room temperature photoluminescence (PL) was observed from GeSn layers fabricated by ion implantation of Sn into bulk Ge followed by pulsed laser melting using an Nd:YAG laser at 355 nm. PL measurements indicate regions of high-crystalline quality with Sn concentrations of up to 9%.

AB - Room temperature photoluminescence (PL) was observed from GeSn layers fabricated by ion implantation of Sn into bulk Ge followed by pulsed laser melting using an Nd:YAG laser at 355 nm. PL measurements indicate regions of high-crystalline quality with Sn concentrations of up to 9%.

KW - GeSn

KW - Germanium

KW - Silicon photonics

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U2 - 10.1109/PHOSST.2019.8794879

DO - 10.1109/PHOSST.2019.8794879

M3 - Conference contribution

T3 - IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019

BT - IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE Photonics Society Summer Topical Meeting Series, SUM 2019

Y2 - 8 July 2019 through 10 July 2019

ER -

Mathews J, Tran T, Liu Y, Hudspeth Q, Wang B, Smillie L et al. MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting. In IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8794879. (IEEE Photonics Society Summer Topical Meeting Series 2019, SUM 2019). doi: 10.1109/PHOSST.2019.8794879

MP2-photoluminescence from GESN layers fabricated using ion implantation and pulsed laser melting

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