Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing

S. Mokkapati; Sichao Du; M. Buda; L. Fu; H. H. Tan; C. Jagadish

doi:10.1007/s11671-007-9097-x

Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing

S. Mokkapati^*, Sichao Du, M. Buda, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.

Original language	English
Pages (from-to)	550-553
Number of pages	4
Journal	Nanoscale Research Letters
Volume	2
Issue number	11
DOIs	https://doi.org/10.1007/s11671-007-9097-x
Publication status	Published - Nov 2007

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abstract = "We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.",

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author = "S. Mokkapati and Sichao Du and M. Buda and L. Fu and Tan, {H. H.} and C. Jagadish",

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AU - Du, Sichao

AU - Buda, M.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007/11

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N2 - We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.

AB - We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.

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Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing

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