Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy

The authors demonstrate multiple wavelength lasers fabricated from InGaAs quantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack of InGaAs quantum dots with different band gap energies in selected regions of the substrate, for fabrication of the lasers. The mechanism responsible for engineering of the band gap of quantum dots is discussed. The performance of the selectively grown lasers is compared to the lasers fabricated from structures grown in a standard, nonselective area growth process.