Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys

K. M. Yu; W. Walukiewicz; J. Wu; W. Shan; J. W. Beeman; M. A. Scarpulla; O. D. Dubon; M. C. Ridgway; D. E. Mars; D. R. Chamberlin

doi:10.1063/1.1616980

Mutual passivation of group IV donors and nitrogen in diluted GaN _xAs_1-x alloys

K. M. Yu^*, W. Walukiewicz, J. Wu, W. Shan, J. W. Beeman, M. A. Scarpulla, O. D. Dubon, M. C. Ridgway, D. E. Mars, D. R. Chamberlin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The mutual passivation of group IV donors and nitrogen in diluted GaN _xAs_1-x alloys was discussed. It was found that the mutual passivation resulted in the electric deactivation of Ge_Ga donors and suppression of the N_As induced band gap narrowing through the formation of Ge_Ga-N_As nearest neighbor pairs. The evidences for general nature of the mutual passivation phenomenon in highly mismatched semiconductor were also presented.

Original language	English
Pages (from-to)	2844-2846
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	14
DOIs	https://doi.org/10.1063/1.1616980
Publication status	Published - 6 Oct 2003

Access to Document

10.1063/1.1616980

Cite this

@article{ec665ba288064fe780cea4ea5ade9aab,

title = "Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys",

abstract = "The mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys was discussed. It was found that the mutual passivation resulted in the electric deactivation of GeGa donors and suppression of the NAs induced band gap narrowing through the formation of GeGa-NAs nearest neighbor pairs. The evidences for general nature of the mutual passivation phenomenon in highly mismatched semiconductor were also presented.",

author = "Yu, {K. M.} and W. Walukiewicz and J. Wu and W. Shan and Beeman, {J. W.} and Scarpulla, {M. A.} and Dubon, {O. D.} and Ridgway, {M. C.} and Mars, {D. E.} and Chamberlin, {D. R.}",

year = "2003",

month = oct,

day = "6",

doi = "10.1063/1.1616980",

language = "English",

volume = "83",

pages = "2844--2846",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Wu, J.

AU - Shan, W.

AU - Beeman, J. W.

AU - Scarpulla, M. A.

AU - Dubon, O. D.

AU - Ridgway, M. C.

AU - Mars, D. E.

AU - Chamberlin, D. R.

PY - 2003/10/6

Y1 - 2003/10/6

N2 - The mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys was discussed. It was found that the mutual passivation resulted in the electric deactivation of GeGa donors and suppression of the NAs induced band gap narrowing through the formation of GeGa-NAs nearest neighbor pairs. The evidences for general nature of the mutual passivation phenomenon in highly mismatched semiconductor were also presented.

AB - The mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys was discussed. It was found that the mutual passivation resulted in the electric deactivation of GeGa donors and suppression of the NAs induced band gap narrowing through the formation of GeGa-NAs nearest neighbor pairs. The evidences for general nature of the mutual passivation phenomenon in highly mismatched semiconductor were also presented.

UR - http://www.scopus.com/inward/record.url?scp=10744231136&partnerID=8YFLogxK

U2 - 10.1063/1.1616980

DO - 10.1063/1.1616980

M3 - Article

SN - 0003-6951

VL - 83

SP - 2844

EP - 2846

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Mutual passivation of group IV donors and nitrogen in diluted GaN _xAs_1-x alloys

Abstract

Access to Document

Other files and links

Fingerprint

Cite this