N- and p-typesilicon Solar Cells with Molybdenum Oxide Hole Contacts

James Bullock; Di Yan; Andres Cuevas; Yimao Wan; Christian Samundsett

doi:10.1016/j.egypro.2015.07.063

N- and p-typesilicon Solar Cells with Molybdenum Oxide Hole Contacts

James Bullock, Di Yan, Andres Cuevas, Yimao Wan, Christian Samundsett

Research output: Contribution to journal › Conference article › peer-review

63 Citations (Scopus)

Abstract

This paper provides an experimental proof-of-concept for simple solar cell designs on n- and p-type crystalline silicon (c-Si) substrates which utilise sub-stoichiometric MoO_x (x < 3) films to collect holes. The n-type cell design (referred to as 'moly-poly') features a planar rear SiO_x / poly-Si(n⁺) stack with a planar front SiO_x / MoO_x / ITO stack. We demonstrate an un-optimised conversion efficiency of ∼16.7±1% for a 3 x 3 cm cell using a simple 10-step fabrication procedure. The p-type cell design (referred to as 'moly-BSR') is comprised of a simple SiN_x passivated, textured, front phosphorus diffusion with a rear MoO_x / Ag hole contact. A conversion efficiency of ∼16.4±1% is achieved for 2 x 2 cm using an 11-step fabrication procedure. Beyond the proof-of-concept results achieved, a number of future improvements are also outlined.

Original language	English
Pages (from-to)	446-450
Number of pages	5
Journal	Energy Procedia
Volume	77
DOIs	https://doi.org/10.1016/j.egypro.2015.07.063
Publication status	Published - 2015
Event	5th International Conference on Silicon Photovoltaics, SiliconPV 2015 - Konstanz, Germany Duration: 25 Mar 2015 → 27 Mar 2015

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title = "N- and p-typesilicon Solar Cells with Molybdenum Oxide Hole Contacts",

abstract = "This paper provides an experimental proof-of-concept for simple solar cell designs on n- and p-type crystalline silicon (c-Si) substrates which utilise sub-stoichiometric MoOx (x < 3) films to collect holes. The n-type cell design (referred to as 'moly-poly') features a planar rear SiOx / poly-Si(n+) stack with a planar front SiOx / MoOx / ITO stack. We demonstrate an un-optimised conversion efficiency of ∼16.7±1% for a 3 x 3 cm cell using a simple 10-step fabrication procedure. The p-type cell design (referred to as 'moly-BSR') is comprised of a simple SiNx passivated, textured, front phosphorus diffusion with a rear MoOx / Ag hole contact. A conversion efficiency of ∼16.4±1% is achieved for 2 x 2 cm using an 11-step fabrication procedure. Beyond the proof-of-concept results achieved, a number of future improvements are also outlined.",

keywords = "Carrier-selective contacts, Molybdenum oxide, Silicon solar cells",

author = "James Bullock and Di Yan and Andres Cuevas and Yimao Wan and Christian Samundsett",

note = "Publisher Copyright: {\textcopyright} 2015 The Authors.; 5th International Conference on Silicon Photovoltaics, SiliconPV 2015 ; Conference date: 25-03-2015 Through 27-03-2015",

year = "2015",

doi = "10.1016/j.egypro.2015.07.063",

language = "English",

volume = "77",

pages = "446--450",

journal = "Energy Procedia",

issn = "1876-6102",

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TY - JOUR

T1 - N- and p-typesilicon Solar Cells with Molybdenum Oxide Hole Contacts

AU - Bullock, James

AU - Yan, Di

AU - Cuevas, Andres

AU - Wan, Yimao

AU - Samundsett, Christian

PY - 2015

Y1 - 2015

N2 - This paper provides an experimental proof-of-concept for simple solar cell designs on n- and p-type crystalline silicon (c-Si) substrates which utilise sub-stoichiometric MoOx (x < 3) films to collect holes. The n-type cell design (referred to as 'moly-poly') features a planar rear SiOx / poly-Si(n+) stack with a planar front SiOx / MoOx / ITO stack. We demonstrate an un-optimised conversion efficiency of ∼16.7±1% for a 3 x 3 cm cell using a simple 10-step fabrication procedure. The p-type cell design (referred to as 'moly-BSR') is comprised of a simple SiNx passivated, textured, front phosphorus diffusion with a rear MoOx / Ag hole contact. A conversion efficiency of ∼16.4±1% is achieved for 2 x 2 cm using an 11-step fabrication procedure. Beyond the proof-of-concept results achieved, a number of future improvements are also outlined.

AB - This paper provides an experimental proof-of-concept for simple solar cell designs on n- and p-type crystalline silicon (c-Si) substrates which utilise sub-stoichiometric MoOx (x < 3) films to collect holes. The n-type cell design (referred to as 'moly-poly') features a planar rear SiOx / poly-Si(n+) stack with a planar front SiOx / MoOx / ITO stack. We demonstrate an un-optimised conversion efficiency of ∼16.7±1% for a 3 x 3 cm cell using a simple 10-step fabrication procedure. The p-type cell design (referred to as 'moly-BSR') is comprised of a simple SiNx passivated, textured, front phosphorus diffusion with a rear MoOx / Ag hole contact. A conversion efficiency of ∼16.4±1% is achieved for 2 x 2 cm using an 11-step fabrication procedure. Beyond the proof-of-concept results achieved, a number of future improvements are also outlined.

KW - Carrier-selective contacts

KW - Molybdenum oxide

KW - Silicon solar cells

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U2 - 10.1016/j.egypro.2015.07.063

DO - 10.1016/j.egypro.2015.07.063

M3 - Conference article

SN - 1876-6102

VL - 77

SP - 446

EP - 450

JO - Energy Procedia

JF - Energy Procedia

T2 - 5th International Conference on Silicon Photovoltaics, SiliconPV 2015

Y2 - 25 March 2015 through 27 March 2015

ER -

N- and p-typesilicon Solar Cells with Molybdenum Oxide Hole Contacts

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