N-type multicrystalline silicon: A stable, high lifetime material

A. Cuevas; S. Riepe; M. J. Kerr; D. H. Macdonald; G. Coletti; F. Ferrazza

N-type multicrystalline silicon: A stable, high lifetime material

A. Cuevas^*, S. Riepe, M. J. Kerr, D. H. Macdonald, G. Coletti, F. Ferrazza

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Citations (Scopus)

Abstract

An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3Ωcm, 500μs for 0.9Ωcm and 100μs for 0.36Ωcm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1312-1315
Number of pages	4
Publication status	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

Cite this

Cuevas, A., Riepe, S., Kerr, M. J., Macdonald, D. H., Coletti, G., & Ferrazza, F. (2003). N-type multicrystalline silicon: A stable, high lifetime material. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 1312-1315). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

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title = "N-type multicrystalline silicon: A stable, high lifetime material",

abstract = "An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3Ωcm, 500μs for 0.9Ωcm and 100μs for 0.36Ωcm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.",

author = "A. Cuevas and S. Riepe and Kerr, {M. J.} and Macdonald, {D. H.} and G. Coletti and F. Ferrazza",

year = "2003",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1312--1315",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Cuevas, A, Riepe, S, Kerr, MJ, Macdonald, DH, Coletti, G & Ferrazza, F 2003, N-type multicrystalline silicon: A stable, high lifetime material. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. B, pp. 1312-1315, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03.

N-type multicrystalline silicon: A stable, high lifetime material. / Cuevas, A.; Riepe, S.; Kerr, M. J. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1312-1315 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - N-type multicrystalline silicon

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

AU - Cuevas, A.

AU - Riepe, S.

AU - Kerr, M. J.

AU - Macdonald, D. H.

AU - Coletti, G.

AU - Ferrazza, F.

PY - 2003

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N2 - An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3Ωcm, 500μs for 0.9Ωcm and 100μs for 0.36Ωcm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.

AB - An investigation of n-type multicrystalline silicon grown by directional solidification has produced several important findings: i) demonstration of effective phosphorus gettering; ii) achievement of minority carrier lifetimes above one millisecond; iii) verification of good stability under illumination. The lifetimes after gettering show a strong dependence on doping: 1.6ms for 2.3Ωcm, 500μs for 0.9Ωcm and 100μs for 0.36Ωcm, respectively. Lifetime mapping by infrared carrier density imaging has revealed a large surface variability of this parameter, which is detrimental for large area devices. A minor degradation of the lifetime after light exposure has been observed for the highest lifetime regions, while other wafers and regions remained essentially stable.

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M3 - Conference contribution

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1312

EP - 1315

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

Y2 - 11 May 2003 through 18 May 2003

ER -

Cuevas A, Riepe S, Kerr MJ, Macdonald DH, Coletti G, Ferrazza F. N-type multicrystalline silicon: A stable, high lifetime material. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 1312-1315. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

N-type multicrystalline silicon: A stable, high lifetime material

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