@inproceedings{d9a821c033e7445ca7c4684e4dce8d3c,
title = "N-type silicon solar cells featuring an electron-selective TiO2 contact",
abstract = "In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.",
keywords = "heterojunction, silicon, solar cells, titanium oxide",
author = "Xinbo Yang and Klaus Weber",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7356139",
language = "English",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
address = "United States",
}