N-type silicon solar cells featuring an electron-selective TiO2 contact

Xinbo Yang, Klaus Weber

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    12 Citations (Scopus)

    Abstract

    In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.

    Original languageEnglish
    Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781479979448
    DOIs
    Publication statusPublished - 14 Dec 2015
    Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
    Duration: 14 Jun 201519 Jun 2015

    Publication series

    Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

    Conference

    Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
    Country/TerritoryUnited States
    CityNew Orleans
    Period14/06/1519/06/15

    Fingerprint

    Dive into the research topics of 'N-type silicon solar cells featuring an electron-selective TiO2 contact'. Together they form a unique fingerprint.

    Cite this