Nano-imprinted ferroelectric polymer nanodot arrays for high density data storage

Xiang Zhong Chen; Qian Li; Xin Chen; Xu Guo; Hai Xiong Ge; Yun Liu; Qun Dong Shen

doi:10.1002/adfm.201203042

Nano-imprinted ferroelectric polymer nanodot arrays for high density data storage

Xiang Zhong Chen, Qian Li, Xin Chen, Xu Guo, Hai Xiong Ge, Yun Liu, Qun Dong Shen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

Ferroelectric vinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] free-standing ultrahigh density (≈75 Gb inch^-2) nanodot arrays are successfully fabricated through a facile, high-throughput, and cost-effective nano-imprinting method using disposable anodic aluminum oxide with orderly arranged nanometer-scale pores as molds. The nanodots show a large-area smooth surface morphology, and the piezoresponse in each nanodot is strong and uniform. The preferred orientation of the copolymer chains in the nanodot arrays is favorable for polarization switching of single nanodots. The ferroelectric polymer memory prototype can be operated by a few volts with high writing/erasing speed, which comply with the requirements of integrated circuit. This approach provides a way of directly writing nanometer electronic features in two dimensions by piezoresponse force microscopy probe based technology, which is attractive for high density data storage.

Original language	English
Pages (from-to)	3124-3129
Number of pages	6
Journal	Advanced Functional Materials
Volume	23
Issue number	24
DOIs	https://doi.org/10.1002/adfm.201203042
Publication status	Published - 25 Jun 2013

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title = "Nano-imprinted ferroelectric polymer nanodot arrays for high density data storage",

abstract = "Ferroelectric vinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] free-standing ultrahigh density (≈75 Gb inch-2) nanodot arrays are successfully fabricated through a facile, high-throughput, and cost-effective nano-imprinting method using disposable anodic aluminum oxide with orderly arranged nanometer-scale pores as molds. The nanodots show a large-area smooth surface morphology, and the piezoresponse in each nanodot is strong and uniform. The preferred orientation of the copolymer chains in the nanodot arrays is favorable for polarization switching of single nanodots. The ferroelectric polymer memory prototype can be operated by a few volts with high writing/erasing speed, which comply with the requirements of integrated circuit. This approach provides a way of directly writing nanometer electronic features in two dimensions by piezoresponse force microscopy probe based technology, which is attractive for high density data storage.",

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T1 - Nano-imprinted ferroelectric polymer nanodot arrays for high density data storage

AU - Chen, Xiang Zhong

AU - Li, Qian

AU - Chen, Xin

AU - Guo, Xu

AU - Ge, Hai Xiong

AU - Liu, Yun

AU - Shen, Qun Dong

PY - 2013/6/25

Y1 - 2013/6/25

N2 - Ferroelectric vinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] free-standing ultrahigh density (≈75 Gb inch-2) nanodot arrays are successfully fabricated through a facile, high-throughput, and cost-effective nano-imprinting method using disposable anodic aluminum oxide with orderly arranged nanometer-scale pores as molds. The nanodots show a large-area smooth surface morphology, and the piezoresponse in each nanodot is strong and uniform. The preferred orientation of the copolymer chains in the nanodot arrays is favorable for polarization switching of single nanodots. The ferroelectric polymer memory prototype can be operated by a few volts with high writing/erasing speed, which comply with the requirements of integrated circuit. This approach provides a way of directly writing nanometer electronic features in two dimensions by piezoresponse force microscopy probe based technology, which is attractive for high density data storage.

AB - Ferroelectric vinylidene fluoride-trifluoroethylene copolymer [P(VDF-TrFE)] free-standing ultrahigh density (≈75 Gb inch-2) nanodot arrays are successfully fabricated through a facile, high-throughput, and cost-effective nano-imprinting method using disposable anodic aluminum oxide with orderly arranged nanometer-scale pores as molds. The nanodots show a large-area smooth surface morphology, and the piezoresponse in each nanodot is strong and uniform. The preferred orientation of the copolymer chains in the nanodot arrays is favorable for polarization switching of single nanodots. The ferroelectric polymer memory prototype can be operated by a few volts with high writing/erasing speed, which comply with the requirements of integrated circuit. This approach provides a way of directly writing nanometer electronic features in two dimensions by piezoresponse force microscopy probe based technology, which is attractive for high density data storage.

KW - P(VDF-TrFE)

KW - data storage

KW - ferroelectric materials

KW - nano-imprinting

KW - nanodots

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DO - 10.1002/adfm.201203042

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VL - 23

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JO - Advanced Functional Materials

JF - Advanced Functional Materials

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ER -

Nano-imprinted ferroelectric polymer nanodot arrays for high density data storage

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