Nano-phase separation of arsenic tri-sulphide (As2S3) film and its effect on plasma etching

D. Y. Choi; S. Madden; R. P. Wang; A. Rode; M. Krolikowska; B. Luther-Davies

doi:10.1016/j.jnoncrysol.2006.12.102

Nano-phase separation of arsenic tri-sulphide (As₂S₃) film and its effect on plasma etching

D. Y. Choi^*, S. Madden, R. P. Wang, A. Rode, M. Krolikowska, B. Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We present evidence of nano-scale phase separation in amorphous arsenic tri-sulphide films prepared by ultra-fast pulsed laser deposition based on Raman spectroscopy, X-ray photo-electron spectroscopy, and atomic force microscopy. We also show the results from plasma etching this material and conclude that the grainy structure of etched surfaces comes from the differential chemical etch rates of the different phases.

Original language	English
Pages (from-to)	953-955
Number of pages	3
Journal	Journal of Non-Crystalline Solids
Volume	353
Issue number	8-10
DOIs	https://doi.org/10.1016/j.jnoncrysol.2006.12.102
Publication status	Published - 15 Apr 2007

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10.1016/j.jnoncrysol.2006.12.102

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abstract = "We present evidence of nano-scale phase separation in amorphous arsenic tri-sulphide films prepared by ultra-fast pulsed laser deposition based on Raman spectroscopy, X-ray photo-electron spectroscopy, and atomic force microscopy. We also show the results from plasma etching this material and conclude that the grainy structure of etched surfaces comes from the differential chemical etch rates of the different phases.",

keywords = "Chalcogenides, Laser deposition, Planar waveguides, Raman spectroscopy, UPS/XPS",

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AU - Choi, D. Y.

AU - Madden, S.

AU - Wang, R. P.

AU - Rode, A.

AU - Krolikowska, M.

AU - Luther-Davies, B.

PY - 2007/4/15

Y1 - 2007/4/15

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AB - We present evidence of nano-scale phase separation in amorphous arsenic tri-sulphide films prepared by ultra-fast pulsed laser deposition based on Raman spectroscopy, X-ray photo-electron spectroscopy, and atomic force microscopy. We also show the results from plasma etching this material and conclude that the grainy structure of etched surfaces comes from the differential chemical etch rates of the different phases.

KW - Chalcogenides

KW - Laser deposition

KW - Planar waveguides

KW - Raman spectroscopy

KW - UPS/XPS

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JF - Journal of Non-Crystalline Solids

IS - 8-10

ER -

Nano-phase separation of arsenic tri-sulphide (As₂S₃) film and its effect on plasma etching

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