Nanoindentation-induced phase transformations in silicon at elevated temperatures

S. Ruffell*, J. E. Bradby, J. S. Williams, D. Munoz-Paniagua, S. Tadayyon, L. L. Coatsworth, P. R. Norton

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    50 Citations (Scopus)

    Abstract

    The nanoindentation-induced phase transformation behavior of silicon at elevated temperatures (25-150 °C) has been studied. Nucleation of Si-III/Si-XII on unloading is enhanced with increasing temperature and at the highest temperatures in an amorphous Si matrix, occurs in a continuous fashion without a pop-out event. Interestingly, for slow unloading at the highest temperatures, formation of Si-III/Si-XII in a crystalline Si matrix was not observed. Elevated temperatures enhance the nucleation of Si-III and Si-XII during unloading but the final composition of the phase transformed zone is also dependent on the thermal stability of the phases in their respective matrices.

    Original languageEnglish
    Article number135603
    JournalNanotechnology
    Volume20
    Issue number13
    DOIs
    Publication statusPublished - 2009

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