Nanoindentation of epitaxial GaN films

S. O. Kucheyev; J. E. Bradby; J. S. Williams; C. Jagadish; M. Toth; M. R. Phillips; M. V. Swain

doi:10.1063/1.1328047

Nanoindentation of epitaxial GaN films

S. O. Kucheyev^*, J. E. Bradby, J. S. Williams, C. Jagadish, M. Toth, M. R. Phillips, M. V. Swain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

109 Citations (Scopus)

Abstract

Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the "pop-in" events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed.

Original language	English
Pages (from-to)	3373-3375
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	21
DOIs	https://doi.org/10.1063/1.1328047
Publication status	Published - 20 Nov 2000

Access to Document

10.1063/1.1328047

Cite this

@article{a10456196b3f41babebc59f8b4dfe1d6,

title = "Nanoindentation of epitaxial GaN films",

abstract = "Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the {"}pop-in{"} events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed.",

author = "Kucheyev, {S. O.} and Bradby, {J. E.} and Williams, {J. S.} and C. Jagadish and M. Toth and Phillips, {M. R.} and Swain, {M. V.}",

year = "2000",

month = nov,

day = "20",

doi = "10.1063/1.1328047",

language = "English",

volume = "77",

pages = "3373--3375",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Nanoindentation of epitaxial GaN films

AU - Kucheyev, S. O.

AU - Bradby, J. E.

AU - Williams, J. S.

AU - Jagadish, C.

AU - Toth, M.

AU - Phillips, M. R.

AU - Swain, M. V.

PY - 2000/11/20

Y1 - 2000/11/20

N2 - Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the "pop-in" events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed.

AB - Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the "pop-in" events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed.

UR - http://www.scopus.com/inward/record.url?scp=0001492071&partnerID=8YFLogxK

U2 - 10.1063/1.1328047

DO - 10.1063/1.1328047

M3 - Article

SN - 0003-6951

VL - 77

SP - 3373

EP - 3375

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Nanoindentation of epitaxial GaN films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this