Nanoindentation of Si nanocrystals in SiO2

Wilson Pok; Jodie Bradby; Rob Elliman

doi:10.1109/COMMAD.2004.1577559

Nanoindentation of Si nanocrystals in SiO₂

Wilson Pok^*, Jodie Bradby, Rob Elliman

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Sinc) embedded in SiO ₂. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN for a spherical indenter and between 25 and 50 mN for a Berkovich indenter. The results are consistent with computer simulations of the indentation process on identical systems.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	335-337
Number of pages	3
DOIs	https://doi.org/10.1109/COMMAD.2004.1577559
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

Access to Document

10.1109/COMMAD.2004.1577559

Cite this

@inproceedings{702ddb00c4d64a6287019a96fb719f9b,

title = "Nanoindentation of Si nanocrystals in SiO2",

abstract = "Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Sinc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN for a spherical indenter and between 25 and 50 mN for a Berkovich indenter. The results are consistent with computer simulations of the indentation process on identical systems.",

author = "Wilson Pok and Jodie Bradby and Rob Elliman",

year = "2005",

doi = "10.1109/COMMAD.2004.1577559",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "335--337",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Pok, W, Bradby, J & Elliman, R 2005, Nanoindentation of Si nanocrystals in SiO₂. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577559, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 335-337, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577559

Nanoindentation of Si nanocrystals in SiO₂. / Pok, Wilson; Bradby, Jodie ; Elliman, Rob.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 335-337 1577559 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Nanoindentation of Si nanocrystals in SiO2

AU - Pok, Wilson

AU - Bradby, Jodie

AU - Elliman, Rob

PY - 2005

Y1 - 2005

N2 - Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Sinc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN for a spherical indenter and between 25 and 50 mN for a Berkovich indenter. The results are consistent with computer simulations of the indentation process on identical systems.

AB - Nanoindentation is used to investigate the effects of mechanical deformation on systems of silicon nanocrystals (Sinc) embedded in SiO 2. The process is found to introduce non-radiative defects to the crystals which quench their luminescence in the localised region of the indent. The transformation to high-pressure metastable phases in the underlying Si substrate is characterised by Raman spectroscopy and transmission electron microscopy, with the critical load found to be between 50 and 100 mN for a spherical indenter and between 25 and 50 mN for a Berkovich indenter. The results are consistent with computer simulations of the indentation process on identical systems.

UR - https://www.scopus.com/pages/publications/46149100746

U2 - 10.1109/COMMAD.2004.1577559

DO - 10.1109/COMMAD.2004.1577559

M3 - Conference Paper

SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 335

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BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

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