Nanomechanical properties of sputter-deposited HfO2 and Hf xSi1-xO2 thin films

D. K. Venkatachalam; J. E. Bradby; M. N. Saleh; S. Ruffell; R. G. Elliman

doi:10.1063/1.3627155

Nanomechanical properties of sputter-deposited HfO₂ and Hf _xSi_1-xO₂ thin films

D. K. Venkatachalam^*, J. E. Bradby, M. N. Saleh, S. Ruffell, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The mechanical properties of sputter-deposited HfO₂ and Hf _xSi_1-xO₂ films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 °C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with increasing HfO₂ content, with the hardness increasing from 5.0 ± 0.3 GPa for pure SiO₂ to 8.4 ± 0.4 GPa for pure HfO₂. All films were found to be harder after annealing at 1000°C, with the increase for SiO₂ films attributed to densification of the SiO₂ network and that for the Hf _xSi_1-xO₂ films to a combination of phase separation, densification, and crystallization.

Original language	English
Article number	043527
Journal	Journal of Applied Physics
Volume	110
Issue number	4
DOIs	https://doi.org/10.1063/1.3627155
Publication status	Published - 15 Aug 2011

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abstract = "The mechanical properties of sputter-deposited HfO2 and Hf xSi1-xO2 films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 °C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with increasing HfO2 content, with the hardness increasing from 5.0 ± 0.3 GPa for pure SiO2 to 8.4 ± 0.4 GPa for pure HfO2. All films were found to be harder after annealing at 1000°C, with the increase for SiO2 films attributed to densification of the SiO2 network and that for the Hf xSi1-xO2 films to a combination of phase separation, densification, and crystallization.",

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AU - Venkatachalam, D. K.

AU - Bradby, J. E.

AU - Saleh, M. N.

AU - Ruffell, S.

AU - Elliman, R. G.

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AB - The mechanical properties of sputter-deposited HfO2 and Hf xSi1-xO2 films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 °C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with increasing HfO2 content, with the hardness increasing from 5.0 ± 0.3 GPa for pure SiO2 to 8.4 ± 0.4 GPa for pure HfO2. All films were found to be harder after annealing at 1000°C, with the increase for SiO2 films attributed to densification of the SiO2 network and that for the Hf xSi1-xO2 films to a combination of phase separation, densification, and crystallization.

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Nanomechanical properties of sputter-deposited HfO₂ and Hf _xSi_1-xO₂ thin films

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