Nanometer patterning of thin CoSi₂-films by application of local stress

We have developed a self-assembly method for patterning thin CoSi₂ layers on Si(100) during their formation in a solid state reaction. This technique is based on anisotropic diffusion in a local stress field during rapid thermal processing. The stress is induced by a layer structure consisting of 30 nm SiO₂ and 300 nm Si₃N₄ which is patterned with conventional optical lithography. We have investigated two different silicide formation processes. Firstly, we deposited Co on Si in a UHV MBE chamber. Rapid thermal annealing leads to the formation of polycrystalline CoSi₂. Secondly, we used a titanium oxide mediated epitaxy process. For both processes we observed nanostructures with dimensions of about 100 nm showing wave-like separation edges in the first case and good uniformity in the second case.