Abstract
We have observed nanoscale phase separation in amorphous arsenic trisulfide (As2 S3) films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in C F4 - O2 plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etched surfaces comes from the differential chemical attack between different phases in the film.
Original language | English |
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Article number | 083532 |
Journal | Journal of Applied Physics |
Volume | 102 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2007 |