Nanoscale phase separation in ultrafast pulsed laser deposited arsenic trisulfide (As2 S3) films and its effect on plasma etching

Duk Yong Choi*, Steve Madden, Andrei Rode, Rongping Wang, Barry Luther-Davies

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    23 Citations (Scopus)

    Abstract

    We have observed nanoscale phase separation in amorphous arsenic trisulfide (As2 S3) films produced by ultrafast pulsed laser deposition and its effect on the surface morphology of the film after plasma etching. When the film was etched in C F4 - O2 plasma, a grainy structure was observed on the surface. From Raman and x-ray photoelectron spectroscopies, we concluded that the grainy structure of the etched surfaces comes from the differential chemical attack between different phases in the film.

    Original languageEnglish
    Article number083532
    JournalJournal of Applied Physics
    Volume102
    Issue number8
    DOIs
    Publication statusPublished - 2007

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