Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors

Damon J. Carrad; Adam M. Burke; Sofia Fahlvik Svensson; Roman W. Lyttleton; Hannah J. Joyce; Hark Hoe Tan; Chennupati Jagadish; Kristian Storm; Lars Samuelson; Heiner Linke; Adam P. Micolich

doi:10.1109/COMMAD.2014.7038713

Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors

Damon J. Carrad, Adam M. Burke, Sofia Fahlvik Svensson, Roman W. Lyttleton, Hannah J. Joyce, Hark Hoe Tan, Chennupati Jagadish, Kristian Storm, Lars Samuelson, Heiner Linke, Adam P. Micolich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a method to pattern the poly(ethylene oxide)/LiClO₄ polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a 'wrap-gate' geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics comparable to conventional metal/oxide wrap-gates at room temperature. The strong tuning at room temperature combined with the 'freeze-out' of Li⁺/ClO₄^- transport for T < 220 K allows a wide range of charge environments to be set and held for quantum transport measurements. The simplicity of fabrication and excellent gate characteristics broadens the scope for polymer electrolyte gating in studies of nanowires and other nanoscale devices.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	286-289
Number of pages	4
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038713
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

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10.1109/COMMAD.2014.7038713

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Carrad, D. J., Burke, A. M., Svensson, S. F., Lyttleton, R. W., Joyce, H. J., Tan, H. H., Jagadish, C., Storm, K., Samuelson, L., Linke, H., & Micolich, A. P. (2014). Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 286-289). Article 7038713 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038713

Carrad, Damon J. ; Burke, Adam M. ; Svensson, Sofia Fahlvik et al. / Nanoscale polymer electrolytes : Fabrication and applications using nanowire transistors. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 286-289 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

@inproceedings{0b552fc45ca64b68bfb4ffe62483eff5,

title = "Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors",

abstract = "We present a method to pattern the poly(ethylene oxide)/LiClO4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a 'wrap-gate' geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics comparable to conventional metal/oxide wrap-gates at room temperature. The strong tuning at room temperature combined with the 'freeze-out' of Li+/ClO4- transport for T < 220 K allows a wide range of charge environments to be set and held for quantum transport measurements. The simplicity of fabrication and excellent gate characteristics broadens the scope for polymer electrolyte gating in studies of nanowires and other nanoscale devices.",

keywords = "III-V nanowires, electron beam lithography, polymer electrolytes, quantum transport",

author = "Carrad, {Damon J.} and Burke, {Adam M.} and Svensson, {Sofia Fahlvik} and Lyttleton, {Roman W.} and Joyce, {Hannah J.} and Tan, {Hark Hoe} and Chennupati Jagadish and Kristian Storm and Lars Samuelson and Heiner Linke and Micolich, {Adam P.}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

month = feb,

day = "10",

doi = "10.1109/COMMAD.2014.7038713",

language = "English",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "286--289",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

address = "United States",

}

Carrad, DJ, Burke, AM, Svensson, SF, Lyttleton, RW, Joyce, HJ, Tan, HH , Jagadish, C, Storm, K, Samuelson, L, Linke, H & Micolich, AP 2014, Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038713, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 286-289, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038713

Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors. / Carrad, Damon J.; Burke, Adam M.; Svensson, Sofia Fahlvik et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 286-289 7038713 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanoscale polymer electrolytes

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

AU - Carrad, Damon J.

AU - Burke, Adam M.

AU - Svensson, Sofia Fahlvik

AU - Lyttleton, Roman W.

AU - Joyce, Hannah J.

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Storm, Kristian

AU - Samuelson, Lars

AU - Linke, Heiner

AU - Micolich, Adam P.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - We present a method to pattern the poly(ethylene oxide)/LiClO4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a 'wrap-gate' geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics comparable to conventional metal/oxide wrap-gates at room temperature. The strong tuning at room temperature combined with the 'freeze-out' of Li+/ClO4- transport for T < 220 K allows a wide range of charge environments to be set and held for quantum transport measurements. The simplicity of fabrication and excellent gate characteristics broadens the scope for polymer electrolyte gating in studies of nanowires and other nanoscale devices.

AB - We present a method to pattern the poly(ethylene oxide)/LiClO4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a 'wrap-gate' geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics comparable to conventional metal/oxide wrap-gates at room temperature. The strong tuning at room temperature combined with the 'freeze-out' of Li+/ClO4- transport for T < 220 K allows a wide range of charge environments to be set and held for quantum transport measurements. The simplicity of fabrication and excellent gate characteristics broadens the scope for polymer electrolyte gating in studies of nanowires and other nanoscale devices.

KW - III-V nanowires

KW - electron beam lithography

KW - polymer electrolytes

KW - quantum transport

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U2 - 10.1109/COMMAD.2014.7038713

DO - 10.1109/COMMAD.2014.7038713

M3 - Conference contribution

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 286

EP - 289

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 14 December 2014 through 17 December 2014

ER -

Carrad DJ, Burke AM, Svensson SF, Lyttleton RW, Joyce HJ, Tan HH et al. Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 286-289. 7038713. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038713

Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors

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