Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

Peng Yu; Ziyuan Li; Tongwei Wu; Yi Tao Wang; Xin Tong; Chuan Feng Li; Zhongchang Wang; Su Huai Wei; Yunyan Zhang; Huiyun Liu; Lan Fu; Yanning Zhang; Jiang Wu; Hark Hoe Tan; Chennupati Jagadish; Zhiming M. Wang

doi:10.1021/acsnano.9b07204

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

Peng Yu, Ziyuan Li, Tongwei Wu, Yi Tao Wang, Xin Tong, Chuan Feng Li, Zhongchang Wang, Su Huai Wei, Yunyan Zhang, Huiyun Liu, Lan Fu, Yanning Zhang, Jiang Wu^*, Hark Hoe Tan, Chennupati Jagadish, Zhiming M. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.

Original language	English
Pages (from-to)	13492-13500
Number of pages	9
Journal	ACS Nano
Volume	13
Issue number	11
DOIs	https://doi.org/10.1021/acsnano.9b07204
Publication status	Published - 26 Nov 2019

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title = "Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission",

abstract = "Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a {"}surface-free{"} GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The {"}surface-free{"} nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.",

keywords = "nanowire, photon antibunching, quantum dot, single photon source, surface engineering",

author = "Peng Yu and Ziyuan Li and Tongwei Wu and Wang, \{Yi Tao\} and Xin Tong and Li, \{Chuan Feng\} and Zhongchang Wang and Wei, \{Su Huai\} and Yunyan Zhang and Huiyun Liu and Lan Fu and Yanning Zhang and Jiang Wu and Tan, \{Hark Hoe\} and Chennupati Jagadish and Wang, \{Zhiming M.\}",

note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = nov,

day = "26",

doi = "10.1021/acsnano.9b07204",

language = "English",

volume = "13",

pages = "13492--13500",

journal = "ACS Nano",

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TY - JOUR

T1 - Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

AU - Yu, Peng

AU - Li, Ziyuan

AU - Wu, Tongwei

AU - Wang, Yi Tao

AU - Tong, Xin

AU - Li, Chuan Feng

AU - Wang, Zhongchang

AU - Wei, Su Huai

AU - Zhang, Yunyan

AU - Liu, Huiyun

AU - Fu, Lan

AU - Zhang, Yanning

AU - Wu, Jiang

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Wang, Zhiming M.

PY - 2019/11/26

Y1 - 2019/11/26

N2 - Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.

AB - Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.

KW - nanowire

KW - photon antibunching

KW - quantum dot

KW - single photon source

KW - surface engineering

UR - https://www.scopus.com/pages/publications/85074876204

U2 - 10.1021/acsnano.9b07204

DO - 10.1021/acsnano.9b07204

M3 - Article

SN - 1936-0851

VL - 13

SP - 13492

EP - 13500

JO - ACS Nano

JF - ACS Nano

IS - 11

ER -

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

Abstract

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