Narrow linewidth brillouin laser based on chalcogenide chip

I. V. Kabakova, R. Pant, D. Y. Choi, S. Debbarma, S. J. Madden, B. Luther-Davies, B. J. Eggleton

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As2S 3 waveguide with a cross-section of 4μm x 850nm and the Brillouin gain coefficient of 0.7 10-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately PL=360 mW, almost 5 times lower than the calculated single-pass threshold P0=1.73 W in the same waveguide. The slope efficiency is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

    Original languageEnglish
    Title of host publication39th European Conference and Exhibition on Optical Communication, ECOC 2013
    Pages411-413
    Number of pages3
    Edition622 CP
    DOIs
    Publication statusPublished - 2013
    Event39th European Conference and Exhibition on Optical Communication, ECOC 2013 - London, United Kingdom
    Duration: 22 Sept 201326 Sept 2013

    Publication series

    NameIET Conference Publications
    Number622 CP
    Volume2013

    Conference

    Conference39th European Conference and Exhibition on Optical Communication, ECOC 2013
    Country/TerritoryUnited Kingdom
    CityLondon
    Period22/09/1326/09/13

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