Narrow linewidth brillouin laser based on chalcogenide chip

I. V. Kabakova; R. Pant; D. Y. Choi; S. Debbarma; S. J. Madden; B. Luther-Davies; B. J. Eggleton

doi:10.1049/cp.2013.1410

Narrow linewidth brillouin laser based on chalcogenide chip

I. V. Kabakova
, R. Pant
, D. Y. Choi
, S. Debbarma
, S. J. Madden
, B. Luther-Davies
, B. J. Eggleton

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As₂S ₃ waveguide with a cross-section of 4μm x 850nm and the Brillouin gain coefficient of 0.7 10^-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately P_L=360 mW, almost 5 times lower than the calculated single-pass threshold P₀=1.73 W in the same waveguide. The slope efficiency is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

Original language	English
Title of host publication	39th European Conference and Exhibition on Optical Communication, ECOC 2013
Pages	411-413
Number of pages	3
Edition	622 CP
DOIs	https://doi.org/10.1049/cp.2013.1410
Publication status	Published - 2013
Event	39th European Conference and Exhibition on Optical Communication, ECOC 2013 - London, United Kingdom Duration: 22 Sept 2013 → 26 Sept 2013

Publication series

Name	IET Conference Publications
Number	622 CP
Volume	2013

Conference

Conference	39th European Conference and Exhibition on Optical Communication, ECOC 2013
Country/Territory	United Kingdom
City	London
Period	22/09/13 → 26/09/13

Access to Document

10.1049/cp.2013.1410

Cite this

Kabakova, I. V., Pant, R., Choi, D. Y., Debbarma, S., Madden, S. J., Luther-Davies, B., & Eggleton, B. J. (2013). Narrow linewidth brillouin laser based on chalcogenide chip. In 39th European Conference and Exhibition on Optical Communication, ECOC 2013 (622 CP ed., pp. 411-413). (IET Conference Publications; Vol. 2013, No. 622 CP). https://doi.org/10.1049/cp.2013.1410

@inproceedings{5494b53093c246119df310beb3485a09,

title = "Narrow linewidth brillouin laser based on chalcogenide chip",

abstract = "We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As2S 3 waveguide with a cross-section of 4μm x 850nm and the Brillouin gain coefficient of 0.7 10-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately PL=360 mW, almost 5 times lower than the calculated single-pass threshold P0=1.73 W in the same waveguide. The slope efficiency is found to be 30\% and the linewidth of 100 kHz is measured using a self-heterodyne method.",

author = "Kabakova, \{I. V.\} and R. Pant and Choi, \{D. Y.\} and S. Debbarma and Madden, \{S. J.\} and B. Luther-Davies and Eggleton, \{B. J.\}",

year = "2013",

doi = "10.1049/cp.2013.1410",

language = "English",

isbn = "9781849197595",

series = "IET Conference Publications",

number = "622 CP",

pages = "411--413",

booktitle = "39th European Conference and Exhibition on Optical Communication, ECOC 2013",

edition = "622 CP",

note = "39th European Conference and Exhibition on Optical Communication, ECOC 2013 ; Conference date: 22-09-2013 Through 26-09-2013",

}

Kabakova, IV, Pant, R, Choi, DY, Debbarma, S, Madden, SJ, Luther-Davies, B & Eggleton, BJ 2013, Narrow linewidth brillouin laser based on chalcogenide chip. in 39th European Conference and Exhibition on Optical Communication, ECOC 2013. 622 CP edn, IET Conference Publications, no. 622 CP, vol. 2013, pp. 411-413, 39th European Conference and Exhibition on Optical Communication, ECOC 2013, London, United Kingdom, 22/09/13. https://doi.org/10.1049/cp.2013.1410

TY - GEN

T1 - Narrow linewidth brillouin laser based on chalcogenide chip

AU - Kabakova, I. V.

AU - Pant, R.

AU - Choi, D. Y.

AU - Debbarma, S.

AU - Madden, S. J.

AU - Luther-Davies, B.

AU - Eggleton, B. J.

PY - 2013

Y1 - 2013

N2 - We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As2S 3 waveguide with a cross-section of 4μm x 850nm and the Brillouin gain coefficient of 0.7 10-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately PL=360 mW, almost 5 times lower than the calculated single-pass threshold P0=1.73 W in the same waveguide. The slope efficiency is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

AB - We demonstrate a narrow linewidth Brillouin ring-cavity laser based on chalcogenide photonic chip. The gain medium is a 7 cm-long As2S 3 waveguide with a cross-section of 4μm x 850nm and the Brillouin gain coefficient of 0.7 10-9 m/W. The waveguides are equipped with vertical tapers so that the coupling loss is reduced. The lasing threshold is approximately PL=360 mW, almost 5 times lower than the calculated single-pass threshold P0=1.73 W in the same waveguide. The slope efficiency is found to be 30% and the linewidth of 100 kHz is measured using a self-heterodyne method.

UR - https://www.scopus.com/pages/publications/84893379317

U2 - 10.1049/cp.2013.1410

DO - 10.1049/cp.2013.1410

M3 - Conference Paper

SN - 9781849197595

T3 - IET Conference Publications

SP - 411

EP - 413

BT - 39th European Conference and Exhibition on Optical Communication, ECOC 2013

T2 - 39th European Conference and Exhibition on Optical Communication, ECOC 2013

Y2 - 22 September 2013 through 26 September 2013

ER -

Narrow linewidth brillouin laser based on chalcogenide chip

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