Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Mohanchand Paladugu; Jin Zou; Ya Nan Guo; Xin Zhang; Yong Kim; Hannah J. Joyce; Qiang Gao; H. Hoe Tan; C. Jagadish

doi:10.1063/1.2978959

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Mohanchand Paladugu, Jin Zou^*, Ya Nan Guo, Xin Zhang, Yong Kim, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

96 Citations (Scopus)

Abstract

The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material.

Original language	English
Article number	101911
Journal	Applied Physics Letters
Volume	93
Issue number	10
DOIs	https://doi.org/10.1063/1.2978959
Publication status	Published - 2008

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abstract = "The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material.",

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AU - Paladugu, Mohanchand

AU - Zou, Jin

AU - Guo, Ya Nan

AU - Zhang, Xin

AU - Kim, Yong

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, C.

PY - 2008

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AB - The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material.

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ER -

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

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