Nb-doped CaTiO3 transparent semiconductor thin films

R. P. Wang; C. J. Tao

doi:10.1016/S0022-0248(02)01646-9

Nb-doped CaTiO₃ transparent semiconductor thin films

R. P. Wang^*, C. J. Tao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Optically transparent Nd-doped CaTiO₃ thin films with a transmittance higher than 60% in the visible region have been epitaxially grown on LaAlO₃(001) substrates by pulsed laser deposition. The films behave as an n-type semiconductor between 50 and 300K. The carrier concentration and mobility of the film at room temperature are about 4.195×10¹⁹cm^-3 and 5.65cm²/Vs, respectively. The root-mean-square surface roughness of the deposited film was measured to be 0.48nm by atomic force microscopy. The conductive mechanism of CaTi_0.9Nb_0.1O₃ films was discussed. The results show the large potential of this material in multilayer devices.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Journal of Crystal Growth
Volume	245
Issue number	1-2
DOIs	https://doi.org/10.1016/S0022-0248(02)01646-9
Publication status	Published - Nov 2002
Externally published	Yes

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10.1016/S0022-0248(02)01646-9

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@article{42f309cc947c449794dc48319a4897ce,

title = "Nb-doped CaTiO3 transparent semiconductor thin films",

abstract = "Optically transparent Nd-doped CaTiO3 thin films with a transmittance higher than 60% in the visible region have been epitaxially grown on LaAlO3(001) substrates by pulsed laser deposition. The films behave as an n-type semiconductor between 50 and 300K. The carrier concentration and mobility of the film at room temperature are about 4.195×1019cm-3 and 5.65cm2/Vs, respectively. The root-mean-square surface roughness of the deposited film was measured to be 0.48nm by atomic force microscopy. The conductive mechanism of CaTi0.9Nb0.1O3 films was discussed. The results show the large potential of this material in multilayer devices.",

keywords = "A1. Characterization, A3. Laser epitaxy, B1. Oxides, B2. Semiconducting materials",

author = "Wang, {R. P.} and Tao, {C. J.}",

year = "2002",

month = nov,

doi = "10.1016/S0022-0248(02)01646-9",

language = "English",

volume = "245",

pages = "63--66",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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T1 - Nb-doped CaTiO3 transparent semiconductor thin films

AU - Wang, R. P.

AU - Tao, C. J.

PY - 2002/11

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N2 - Optically transparent Nd-doped CaTiO3 thin films with a transmittance higher than 60% in the visible region have been epitaxially grown on LaAlO3(001) substrates by pulsed laser deposition. The films behave as an n-type semiconductor between 50 and 300K. The carrier concentration and mobility of the film at room temperature are about 4.195×1019cm-3 and 5.65cm2/Vs, respectively. The root-mean-square surface roughness of the deposited film was measured to be 0.48nm by atomic force microscopy. The conductive mechanism of CaTi0.9Nb0.1O3 films was discussed. The results show the large potential of this material in multilayer devices.

AB - Optically transparent Nd-doped CaTiO3 thin films with a transmittance higher than 60% in the visible region have been epitaxially grown on LaAlO3(001) substrates by pulsed laser deposition. The films behave as an n-type semiconductor between 50 and 300K. The carrier concentration and mobility of the film at room temperature are about 4.195×1019cm-3 and 5.65cm2/Vs, respectively. The root-mean-square surface roughness of the deposited film was measured to be 0.48nm by atomic force microscopy. The conductive mechanism of CaTi0.9Nb0.1O3 films was discussed. The results show the large potential of this material in multilayer devices.

KW - A1. Characterization

KW - A3. Laser epitaxy

KW - B1. Oxides

KW - B2. Semiconducting materials

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U2 - 10.1016/S0022-0248(02)01646-9

DO - 10.1016/S0022-0248(02)01646-9

M3 - Article

SN - 0022-0248

VL - 245

SP - 63

EP - 66

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Nb-doped CaTiO₃ transparent semiconductor thin films

Abstract

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