Near-surface regrowth rate effects in high-dose ion-implanted (100) silicon

J. S. Williams; R. G. Elliman

doi:10.1063/1.92096

Near-surface regrowth rate effects in high-dose ion-implanted (100) silicon

J. S. Williams^*, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

High-resolution Rutherford backscattering and channeling has been employed to investigate regrowth kinetics of amorphous layers in high-dose As- and Pb-implanted (100) silicon. Our results indicate that epitaxial regrowth rates are severely retarded by high concentrations of Pb and As in the silicon lattice and that polycrystalline growth may predominate under such conditions.

Original language	English
Pages (from-to)	829-831
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1063/1.92096
Publication status	Published - 1980
Externally published	Yes

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10.1063/1.92096

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title = "Near-surface regrowth rate effects in high-dose ion-implanted (100) silicon",

abstract = "High-resolution Rutherford backscattering and channeling has been employed to investigate regrowth kinetics of amorphous layers in high-dose As- and Pb-implanted (100) silicon. Our results indicate that epitaxial regrowth rates are severely retarded by high concentrations of Pb and As in the silicon lattice and that polycrystalline growth may predominate under such conditions.",

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AU - Elliman, R. G.

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AB - High-resolution Rutherford backscattering and channeling has been employed to investigate regrowth kinetics of amorphous layers in high-dose As- and Pb-implanted (100) silicon. Our results indicate that epitaxial regrowth rates are severely retarded by high concentrations of Pb and As in the silicon lattice and that polycrystalline growth may predominate under such conditions.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Near-surface regrowth rate effects in high-dose ion-implanted (100) silicon

Abstract

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