Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

S. Perera*, M. A. Fickenscher, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, X. Zhang, J. Zou

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    117 Citations (Scopus)

    Abstract

    CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

    Original languageEnglish
    Article number053110
    JournalApplied Physics Letters
    Volume93
    Issue number5
    DOIs
    Publication statusPublished - 2008

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