Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

S. Perera; M. A. Fickenscher; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish; X. Zhang; J. Zou

doi:10.1063/1.2967877

Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

S. Perera^*, M. A. Fickenscher, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish, X. Zhang, J. Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

118 Citations (Scopus)

Abstract

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

Original language	English
Article number	053110
Journal	Applied Physics Letters
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.2967877
Publication status	Published - 2008

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title = "Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures",

abstract = "CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.",

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journal = "Applied Physics Letters",

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T1 - Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

AU - Perera, S.

AU - Fickenscher, M. A.

AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Zhang, X.

AU - Zou, J.

PY - 2008

Y1 - 2008

N2 - CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

AB - CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAsAlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of ∼1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

UR - https://www.scopus.com/pages/publications/51849161220

U2 - 10.1063/1.2967877

DO - 10.1063/1.2967877

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053110

ER -

Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

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