Negative ions in single and dual frequency capacitively coupled fluorocarbon plasmas

We have studied charged particle densities and fluxes in a customized industrial etch reactor, running in Ar/O₂/c-C₄F ₈ gas mixtures at pressures in the region of 50 mTorr and driven by 2 and 27 MHz RF power, either separately or simultaneously. Independent control of ion flux and ion energy is the aim of using dual frequency plasmas. However, little experimental data exists regarding the charged particle dynamics in complex industrial gas mixtures. Negative ions could play an important role in this type of plasma. The presence of negative ions will modify the positive ion flux arriving at a surface, and they may even reach the surface and participate in etching. We have measured the electron density using a microwave hairpin resonator and the positive ion flux with a RF biased ion flux probe. The ratio of these two quantities, which depends on the negative ion fractions and other factors, is seen to vary strongly with gas chemistry, giving evidence for the presence of negative ions. Our results indicate high electronegativity for high c-C₄F₈ flow rates. We have also examined the effect of varying the 2 and 27.12 MHz RF powers on both the electron density and the positive ion flux. This allows us to estimate the effect of varying power on the negative ion density. In addition, ultra-violet cavity ring-down spectroscopy was used to measure the F^- density directly (Booth et al 2006 Appl. Phys. Lett. 88 151502). This optical measurement was compared with the probe technique.