Negligible nonlinear absorption in hydrogenated amorphous silicon at 1.55μm for ultra-fast nonlinear signal processing

Xin Gai; Duk Yong Choi; Barry Luther-Davies

doi:10.1364/OE.22.009948

Negligible nonlinear absorption in hydrogenated amorphous silicon at 1.55μm for ultra-fast nonlinear signal processing

Xin Gai, Duk Yong Choi, Barry Luther-Davies

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48 Citations (Scopus)

Abstract

Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H-W) at 1.55μm. The nonlinear index n2 and 3PA coefficient were measured to be 22 × 10-17m2/W and 5.0 × 10-26 m3/W2 respectively at 1.55μm by using the z-scan method. This indicates that the figure of merit (FOM) of this material is intensity dependent. A value FOM>60 is predicted at intensities below 0.5 GW/cm2 which is the maximum practical intensity for high-bit-rate (>160GB/s) alloptical signal processing. The nonlinear phase change in a-Si:H-W has been compared with other common nonlinear materials (c-Si, As2S3, Ge11.5As24Se64.5) for a 2cm long waveguide with a-Si:H-W showing the greatest potential for integrated devices for all-optical processing with a high nonlinear index and negligible nonlinear absorption at intensities < 0.5GW/cm2.

Original language	English
Pages (from-to)	9948-9958
Number of pages	11
Journal	Optics Express
Volume	22
Issue number	8
DOIs	https://doi.org/10.1364/OE.22.009948
Publication status	Published - 21 Apr 2014

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title = "Negligible nonlinear absorption in hydrogenated amorphous silicon at 1.55μm for ultra-fast nonlinear signal processing",

abstract = "Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H-W) at 1.55μm. The nonlinear index n2 and 3PA coefficient were measured to be 22 × 10-17m2/W and 5.0 × 10-26 m3/W2 respectively at 1.55μm by using the z-scan method. This indicates that the figure of merit (FOM) of this material is intensity dependent. A value FOM>60 is predicted at intensities below 0.5 GW/cm2 which is the maximum practical intensity for high-bit-rate (>160GB/s) alloptical signal processing. The nonlinear phase change in a-Si:H-W has been compared with other common nonlinear materials (c-Si, As2S3, Ge11.5As24Se64.5) for a 2cm long waveguide with a-Si:H-W showing the greatest potential for integrated devices for all-optical processing with a high nonlinear index and negligible nonlinear absorption at intensities < 0.5GW/cm2.",

author = "Xin Gai and Choi, {Duk Yong} and Barry Luther-Davies",

year = "2014",

month = apr,

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doi = "10.1364/OE.22.009948",

language = "English",

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journal = "Optics Express",

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TY - JOUR

T1 - Negligible nonlinear absorption in hydrogenated amorphous silicon at 1.55μm for ultra-fast nonlinear signal processing

AU - Gai, Xin

AU - Choi, Duk Yong

AU - Luther-Davies, Barry

PY - 2014/4/21

Y1 - 2014/4/21

N2 - Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H-W) at 1.55μm. The nonlinear index n2 and 3PA coefficient were measured to be 22 × 10-17m2/W and 5.0 × 10-26 m3/W2 respectively at 1.55μm by using the z-scan method. This indicates that the figure of merit (FOM) of this material is intensity dependent. A value FOM>60 is predicted at intensities below 0.5 GW/cm2 which is the maximum practical intensity for high-bit-rate (>160GB/s) alloptical signal processing. The nonlinear phase change in a-Si:H-W has been compared with other common nonlinear materials (c-Si, As2S3, Ge11.5As24Se64.5) for a 2cm long waveguide with a-Si:H-W showing the greatest potential for integrated devices for all-optical processing with a high nonlinear index and negligible nonlinear absorption at intensities < 0.5GW/cm2.

AB - Three-photon absorption (3PA) has been observed as the dominant mechanism for nonlinear absorption in wide-bandgap hydrogenated amorphous silicon (a-Si:H-W) at 1.55μm. The nonlinear index n2 and 3PA coefficient were measured to be 22 × 10-17m2/W and 5.0 × 10-26 m3/W2 respectively at 1.55μm by using the z-scan method. This indicates that the figure of merit (FOM) of this material is intensity dependent. A value FOM>60 is predicted at intensities below 0.5 GW/cm2 which is the maximum practical intensity for high-bit-rate (>160GB/s) alloptical signal processing. The nonlinear phase change in a-Si:H-W has been compared with other common nonlinear materials (c-Si, As2S3, Ge11.5As24Se64.5) for a 2cm long waveguide with a-Si:H-W showing the greatest potential for integrated devices for all-optical processing with a high nonlinear index and negligible nonlinear absorption at intensities < 0.5GW/cm2.

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U2 - 10.1364/OE.22.009948

DO - 10.1364/OE.22.009948

M3 - Article

SN - 1094-4087

VL - 22

SP - 9948

EP - 9958

JO - Optics Express

JF - Optics Express

IS - 8

ER -

Negligible nonlinear absorption in hydrogenated amorphous silicon at 1.55μm for ultra-fast nonlinear signal processing

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