Abstract
We report on a new approach to a unipolar thin film solar cell model. The drift field for separating the generated electron-hole pairs is generated by two antipolar Schottky barriers. As an active layer we used μc-Si with grains of a columnar stucture. Thus the grain boundaries run perpendicular to the surface plane of the active layer. The simulation of the so-called one-grain model of the Schottky solar cell showed promising results. Nevertheless profound investigation and simulation is still necessary in order to describe the Schottky solar cell in a more complex and realistic model.
KEYWORDS: Devices - 1: Simulation - 2: Thin Film - 3
KEYWORDS: Devices - 1: Simulation - 2: Thin Film - 3
| Original language | English |
|---|---|
| Pages | 1850-1853 |
| Number of pages | 4 |
| Publication status | Published - 10 Jul 1998 |
| Event | 2nd World Conference And Exhibition On Photovoltaic Solar Energy Conversion - Vienna, Austria Duration: 6 Jul 1998 → 10 Jul 1998 https://op.europa.eu/en/publication-detail/-/publication/a1cef24d-c7ab-11e9-9d01-01aa75ed71a1 |
Conference
| Conference | 2nd World Conference And Exhibition On Photovoltaic Solar Energy Conversion |
|---|---|
| Country/Territory | Austria |
| City | Vienna |
| Period | 6/07/98 → 10/07/98 |
| Internet address |