TY - JOUR
T1 - New insights into the origin of hysteresis behavior in perovskite solar cells
AU - Li, Xin
AU - Wang, Yichao
AU - Tai, Meiqian
AU - Zhao, Xingyue
AU - Gu, Youchen
AU - Han, Jianhua
AU - Shen, Heping
AU - Li, Jianbao
AU - Lin, Hong
N1 - Publisher Copyright:
© 2018 the Owner Societies.
PY - 2018
Y1 - 2018
N2 - Perovskite solar cells (PSCs) have received tremendous attention due to their stunning progress in photovoltaic performance. The hysteresis behavior, however, is one of the major concerning issues accompanying the development of PSCs. In this context, we propose a new mechanism that explains the origin of hysteresis behavior by analyzing the electrical processes after changing the external electrical bias: the compensating electric field to the scanning voltage induced by drifting carriers. This is further verified by experiments, where we observed much reduced hysteresis in the current density-voltage (J-V) characteristics for the PSCs based on a thinner perovskite layer, which is a result of more evenly distributed electrons and holes. Moreover, light illumination with different wavelengths was applied to vary the initial carrier distribution inside the perovskite layer. We found that J-V curves when illuminating the device with longer wavelengths exhibited diminished hysteresis, which could be a result of more evenly generated carriers due to a smaller absorptivity than that with short wavelength illumination. Based on the proposed model, three key factors affecting the hysteresis behavior were pointed out, including the initial carrier distribution, the carrier transport properties in the perovskite layer, and the carrier extraction properties at the interfaces. Strategies to construct hysteresis-free and stable PSCs have thus been accordingly proposed.
AB - Perovskite solar cells (PSCs) have received tremendous attention due to their stunning progress in photovoltaic performance. The hysteresis behavior, however, is one of the major concerning issues accompanying the development of PSCs. In this context, we propose a new mechanism that explains the origin of hysteresis behavior by analyzing the electrical processes after changing the external electrical bias: the compensating electric field to the scanning voltage induced by drifting carriers. This is further verified by experiments, where we observed much reduced hysteresis in the current density-voltage (J-V) characteristics for the PSCs based on a thinner perovskite layer, which is a result of more evenly distributed electrons and holes. Moreover, light illumination with different wavelengths was applied to vary the initial carrier distribution inside the perovskite layer. We found that J-V curves when illuminating the device with longer wavelengths exhibited diminished hysteresis, which could be a result of more evenly generated carriers due to a smaller absorptivity than that with short wavelength illumination. Based on the proposed model, three key factors affecting the hysteresis behavior were pointed out, including the initial carrier distribution, the carrier transport properties in the perovskite layer, and the carrier extraction properties at the interfaces. Strategies to construct hysteresis-free and stable PSCs have thus been accordingly proposed.
UR - http://www.scopus.com/inward/record.url?scp=85048991975&partnerID=8YFLogxK
U2 - 10.1039/c8cp01432a
DO - 10.1039/c8cp01432a
M3 - Article
SN - 1463-9076
VL - 20
SP - 16285
EP - 16293
JO - Physical Chemistry Chemical Physics
JF - Physical Chemistry Chemical Physics
IS - 23
ER -