Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

K. M. Yu; W. Walukiewicz; W. Shan; J. Wu; J. W. Ager; E. E. Haller; J. F. Geisz; M. C. Ridgway

doi:10.1063/1.1320872

Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN_xAs_1-x

K. M. Yu^*, W. Walukiewicz, W. Shan, J. Wu, J. W. Ager, E. E. Haller, J. F. Geisz, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaN_xAs^1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×10¹⁸cm^-3 for implanted S concentration higher than 10¹⁹cm^-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.

Original language	English
Pages (from-to)	2858-2860
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	18
DOIs	https://doi.org/10.1063/1.1320872
Publication status	Published - 30 Oct 2000

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abstract = "We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.",

author = "Yu, {K. M.} and W. Walukiewicz and W. Shan and J. Wu and Ager, {J. W.} and Haller, {E. E.} and Geisz, {J. F.} and Ridgway, {M. C.}",

year = "2000",

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doi = "10.1063/1.1320872",

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T1 - Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Wu, J.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Geisz, J. F.

AU - Ridgway, M. C.

PY - 2000/10/30

Y1 - 2000/10/30

N2 - We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.

AB - We have achieved a large increase of the activation efficiency of sulfur atoms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N content, we find a maximum free electron concentration of >6×1018cm-3 for implanted S concentration higher than 1019cm-3, about 20 times larger than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be quantitatively explained with the recently developed band anticrossing model.

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U2 - 10.1063/1.1320872

DO - 10.1063/1.1320872

M3 - Article

SN - 0003-6951

VL - 77

SP - 2858

EP - 2860

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaN_xAs_1-x

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