Nitrogen-rich indium nitride

K. S.A. Butcher; M. Wintrebert-Fouquet; P. P.T. Chen; T. L. Tansley; H. Dou; S. K. Shrestha; H. Timmers; M. Kuball; K. E. Prince; J. E. Bradby

doi:10.1063/1.1711173

Nitrogen-rich indium nitride

K. S.A. Butcher^*
, M. Wintrebert-Fouquet
, P. P.T. Chen
, T. L. Tansley
, H. Dou
, S. K. Shrestha
, H. Timmers
, M. Kuball
, K. E. Prince
, J. E. Bradby

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

Elastic recoil detection analysis was used to measure indium nitride films grown by radio-frequency sputtering. It was found that the films have nitrogen-rich stoichiometry. Secondary ion mass spectroscopy and ultraviolet Raman measurements were used to probe the state of the excess nitrogen. A shift in the (0002) x-ray diffraction peak correlated with the excess nitrogen but not with the oxygen in some samples. The results show that the high n-type carrier concentration for rf sputtered indium nitride was not due to nitrogen vacancies and that excess nitrogen was the source of the background n-type doping.

Original language	English
Pages (from-to)	6124-6128
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1711173
Publication status	Published - 1 Jun 2004

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@article{64677c4f5d5e42b7800b35b65fd17299,

title = "Nitrogen-rich indium nitride",

abstract = "Elastic recoil detection analysis was used to measure indium nitride films grown by radio-frequency sputtering. It was found that the films have nitrogen-rich stoichiometry. Secondary ion mass spectroscopy and ultraviolet Raman measurements were used to probe the state of the excess nitrogen. A shift in the (0002) x-ray diffraction peak correlated with the excess nitrogen but not with the oxygen in some samples. The results show that the high n-type carrier concentration for rf sputtered indium nitride was not due to nitrogen vacancies and that excess nitrogen was the source of the background n-type doping.",

author = "Butcher, \{K. S.A.\} and M. Wintrebert-Fouquet and Chen, \{P. P.T.\} and Tansley, \{T. L.\} and H. Dou and Shrestha, \{S. K.\} and H. Timmers and M. Kuball and Prince, \{K. E.\} and Bradby, \{J. E.\}",

year = "2004",

month = jun,

day = "1",

doi = "10.1063/1.1711173",

language = "English",

volume = "95",

pages = "6124--6128",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11 I",

}

TY - JOUR

T1 - Nitrogen-rich indium nitride

AU - Butcher, K. S.A.

AU - Wintrebert-Fouquet, M.

AU - Chen, P. P.T.

AU - Tansley, T. L.

AU - Dou, H.

AU - Shrestha, S. K.

AU - Timmers, H.

AU - Kuball, M.

AU - Prince, K. E.

AU - Bradby, J. E.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Elastic recoil detection analysis was used to measure indium nitride films grown by radio-frequency sputtering. It was found that the films have nitrogen-rich stoichiometry. Secondary ion mass spectroscopy and ultraviolet Raman measurements were used to probe the state of the excess nitrogen. A shift in the (0002) x-ray diffraction peak correlated with the excess nitrogen but not with the oxygen in some samples. The results show that the high n-type carrier concentration for rf sputtered indium nitride was not due to nitrogen vacancies and that excess nitrogen was the source of the background n-type doping.

AB - Elastic recoil detection analysis was used to measure indium nitride films grown by radio-frequency sputtering. It was found that the films have nitrogen-rich stoichiometry. Secondary ion mass spectroscopy and ultraviolet Raman measurements were used to probe the state of the excess nitrogen. A shift in the (0002) x-ray diffraction peak correlated with the excess nitrogen but not with the oxygen in some samples. The results show that the high n-type carrier concentration for rf sputtered indium nitride was not due to nitrogen vacancies and that excess nitrogen was the source of the background n-type doping.

UR - https://www.scopus.com/pages/publications/2942653173

U2 - 10.1063/1.1711173

DO - 10.1063/1.1711173

M3 - Article

SN - 0021-8979

VL - 95

SP - 6124

EP - 6128

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11 I

ER -

Nitrogen-rich indium nitride

Abstract

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