Non-linear direct-laser-write lithography for semiconductor nanowire characterisation

P. Parkinson; K. Peng; N. Jiang; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472397

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation

P. Parkinson^*, K. Peng, N. Jiang, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	135-136
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472397
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

Access to Document

10.1109/COMMAD.2012.6472397

Cite this

Parkinson, P., Peng, K., Jiang, N., Gao, Q., Tan, H. H., & Jagadish, C. (2012). Non-linear direct-laser-write lithography for semiconductor nanowire characterisation. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 135-136). Article 6472397 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472397

@inproceedings{e64734f339ab4ec2b7c0482cf842b63c,

title = "Non-linear direct-laser-write lithography for semiconductor nanowire characterisation",

abstract = "A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].",

author = "P. Parkinson and K. Peng and N. Jiang and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472397",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "135--136",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Parkinson, P, Peng, K, Jiang, N, Gao, Q, Tan, HH & Jagadish, C 2012, Non-linear direct-laser-write lithography for semiconductor nanowire characterisation. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472397, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 135-136, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472397

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation. / Parkinson, P.; Peng, K.; Jiang, N. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 135-136 6472397 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Non-linear direct-laser-write lithography for semiconductor nanowire characterisation

AU - Parkinson, P.

AU - Peng, K.

AU - Jiang, N.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].

AB - A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1].

UR - http://www.scopus.com/inward/record.url?scp=84875621383&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2012.6472397

DO - 10.1109/COMMAD.2012.6472397

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 135

EP - 136

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Parkinson P, Peng K, Jiang N, Gao Q, Tan HH , Jagadish C. Non-linear direct-laser-write lithography for semiconductor nanowire characterisation. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 135-136. 6472397. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472397

Non-linear direct-laser-write lithography for semiconductor nanowire characterisation

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this