Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Patrick Parkinson; Christopher Dodson; Hannah J. Joyce; Kris A. Bertness; Norman A. Sanford; Laura M. Herz; Michael B. Johnston

doi:10.1021/nl301898m

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Patrick Parkinson^*, Christopher Dodson, Hannah J. Joyce, Kris A. Bertness, Norman A. Sanford, Laura M. Herz, Michael B. Johnston

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm ²/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

Original language	English
Pages (from-to)	4600-4604
Number of pages	5
Journal	Nano Letters
Volume	12
Issue number	9
DOIs	https://doi.org/10.1021/nl301898m
Publication status	Published - 12 Sept 2012

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title = "Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires",

abstract = "The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.",

keywords = "GaN, nanowire, photoconductivity, surface plasmon, terahertz",

author = "Patrick Parkinson and Christopher Dodson and Joyce, \{Hannah J.\} and Bertness, \{Kris A.\} and Sanford, \{Norman A.\} and Herz, \{Laura M.\} and Johnston, \{Michael B.\}",

year = "2012",

month = sep,

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doi = "10.1021/nl301898m",

language = "English",

volume = "12",

pages = "4600--4604",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

AU - Parkinson, Patrick

AU - Dodson, Christopher

AU - Joyce, Hannah J.

AU - Bertness, Kris A.

AU - Sanford, Norman A.

AU - Herz, Laura M.

AU - Johnston, Michael B.

PY - 2012/9/12

Y1 - 2012/9/12

N2 - The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

AB - The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm 2/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.

KW - GaN

KW - nanowire

KW - photoconductivity

KW - surface plasmon

KW - terahertz

UR - https://www.scopus.com/pages/publications/84866322120

U2 - 10.1021/nl301898m

DO - 10.1021/nl301898m

M3 - Article

SN - 1530-6984

VL - 12

SP - 4600

EP - 4604

JO - Nano Letters

JF - Nano Letters

IS - 9

ER -

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires

Abstract

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