Nonlinear absorption and refraction in crystalline silicon in the mid-infrared

Xin Gai; Yi Yu; Bart Kuyken; Pan Ma; Steve J. Madden; Joris Van Campenhout; Peter Verheyen; Gunther Roelkens; Roel Baets; Barry Luther-Davies

doi:10.1002/lpor.201300103

Nonlinear absorption and refraction in crystalline silicon in the mid-infrared

Xin Gai, Yi Yu, Bart Kuyken, Pan Ma, Steve J. Madden, Joris Van Campenhout, Peter Verheyen, Gunther Roelkens, Roel Baets, Barry Luther-Davies^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

105 Citations (Scopus)

Abstract

The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75μm and 5.5μm as well as at 1.55μm have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum. The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75 μm and 5.5 μm as well as at 1.55 μm have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum.

Original language	English
Pages (from-to)	1054-1064
Number of pages	11
Journal	Laser and Photonics Reviews
Volume	7
Issue number	6
DOIs	https://doi.org/10.1002/lpor.201300103
Publication status	Published - Nov 2013

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10.1002/lpor.201300103

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abstract = "The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75μm and 5.5μm as well as at 1.55μm have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum. The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75 μm and 5.5 μm as well as at 1.55 μm have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum.",

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AU - Gai, Xin

AU - Yu, Yi

AU - Kuyken, Bart

AU - Ma, Pan

AU - Madden, Steve J.

AU - Van Campenhout, Joris

AU - Verheyen, Peter

AU - Roelkens, Gunther

AU - Baets, Roel

AU - Luther-Davies, Barry

PY - 2013/11

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AB - The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75μm and 5.5μm as well as at 1.55μm have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum. The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between 2.75 μm and 5.5 μm as well as at 1.55 μm have been measured. It was found that at all wavelengths multi-photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid-infrared that require strong nonlinear response, such as for the generation of a supercontinuum.

KW - Mid-infrared

KW - Multi-photon absorption

KW - Nonlinear

KW - Silicon photonics

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Nonlinear absorption and refraction in crystalline silicon in the mid-infrared

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