Nonlinear optical properties of ion-implanted GaAs

M. J. Lederer; B. Luther-Davies; H. H. Tan; C. Jagadish; M. Haiml; U. Siegner; U. Keller; J. Zou

doi:10.1109/COMMAD.1998.791606

Nonlinear optical properties of ion-implanted GaAs

M. J. Lederer^*, B. Luther-Davies, H. H. Tan, C. Jagadish, M. Haiml, U. Siegner, U. Keller, J. Zou

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.

Original language	English
Pages	151-153
Number of pages	3
DOIs	https://doi.org/10.1109/COMMAD.1998.791606
Publication status	Published - 1999
Event	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices - Perth, WA, Aust Duration: 14 Dec 1998 → 16 Dec 1998

Conference

Conference	Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices
City	Perth, WA, Aust
Period	14/12/98 → 16/12/98

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10.1109/COMMAD.1998.791606

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title = "Nonlinear optical properties of ion-implanted GaAs",

abstract = "We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.",

author = "Lederer, {M. J.} and B. Luther-Davies and Tan, {H. H.} and C. Jagadish and M. Haiml and U. Siegner and U. Keller and J. Zou",

year = "1999",

doi = "10.1109/COMMAD.1998.791606",

language = "English",

pages = "151--153",

note = "Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 14-12-1998 Through 16-12-1998",

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T1 - Nonlinear optical properties of ion-implanted GaAs

AU - Lederer, M. J.

AU - Luther-Davies, B.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Haiml, M.

AU - Siegner, U.

AU - Keller, U.

AU - Zou, J.

PY - 1999

Y1 - 1999

N2 - We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.

AB - We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.

UR - http://www.scopus.com/inward/record.url?scp=0032661019&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.1998.791606

DO - 10.1109/COMMAD.1998.791606

M3 - Paper

AN - SCOPUS:0032661019

SP - 151

EP - 153

T2 - Proceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 14 December 1998 through 16 December 1998

ER -

Nonlinear optical properties of ion-implanted GaAs

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